GaAs材料及器件的辐照损伤研究进展
Research Progress of Irradiation Damage for GaAs Materials and Devices
DOI: 10.12677/APP.2018.82017, PDF,  被引量    国家自然科学基金支持
作者: 陈炳坤, 贾慧民*, 陈 雪, 王登魁, 方 铉, 唐吉龙, 房 丹, 王新伟, 王晓华, 魏志鹏：长春理工大学高功率半导体激光国家重点实验室，吉林 长春
关键词: GaAs；辐照损伤；电子辐照；质子辐照；离子辐照；GaAs； Irradiation Damage； Electron Irradiation； Proton Irradiation； Ion Irradiation
摘要: GaAs作为重要的III-V族半导体材料，具有直接带隙和高载流子迁移率，且具有良好的抗辐照能力，是制备空间器件的重要候选材料之一。当半导体器件在空间工作时，会受到复杂的空间粒子辐照的影响，导致器件性能下降，可靠性降低，寿命受限，因此，研究GaAs材料的辐照效应损伤具有重要意义。本文综述了不同粒子材料对GaAs材料及器件的辐照损伤效应的研究进展，阐述了不同粒子辐照源对GaAs材料结构及发光特性的影响，对GaAs材料在空间环境中的进一步应用具有实际意义。
Abstract: As a kind of III-V semiconductor materials, GaAs, with direct band gap and high carrier mobility, has a good anti-radiation ability, and makes an important candidate for the preparation of space devices. However, when the semiconductor devices were working in space, they will be affected by the radiation of the complex space particles, resulting in the degradation of the device performance, the decrease of the reliability and the limitation of the lifetime. Therefore, it is of great significance to analyze the irradiation effect damage of the GaAs material. This paper reviews the research progress on the damage effect of different particle materials on GaAs materials and devices, and expounds the influence of different particle irradiation sources on the structure and luminescent properties of GaAs. This paper has practical significance for the further application of GaAs materials in space environment.
文章引用：陈炳坤, 贾慧民, 陈雪, 王登魁, 方铉, 唐吉龙, 房丹, 王新伟, 王晓华, 魏志鹏. GaAs材料及器件的辐照损伤研究进展[J]. 应用物理, 2018, 8(2): 141-150. https://doi.org/10.12677/APP.2018.82017

参考文献

[1] Boland, J.L., Casadei, A., Tutuncuoglu, G., et al. (2016) Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. ACS Nano, 10, 4219-4227. [Google Scholar] [CrossRef] [PubMed]
[2] Chang, C.C., Chi, C.Y., Yao, M., et al. (2012) Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires. Nano Letters, 12, 4484-4489. [Google Scholar] [CrossRef] [PubMed]
[3] Luo, L.B., Chen, J.J., Wang, M.Z., et al. (2014) Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction. Advanced Functional Materials, 24, 2794-2800. [Google Scholar] [CrossRef] 
[4] 郑勇, 肖鹏飞, 易天成, 等. 1MeV电子辐照GaAs/Ge太阳电池变温光致发光研究[J]. 北京师范大学学报(自然科学版), 2015(6): 568-570.
[5] 王建利, 牛沈军, 兰天平, 等. 砷化镓材料[J]. 科技创新导报, 2010(32): 75-77.
[6] Wirth, B.D. (2007) How Does Radiation Damage Materials? Science, 318, 923-924. [Google Scholar] [CrossRef] [PubMed]
[7] Sickafus, K.E., Grimes, R.W., Valdez, J.A., et al. (2007) Radiation-Induced Amorphization Resistance and Radiation Tolerance in Structurally Related Oxides. Nature Materials, 6, 217-23. [Google Scholar] [CrossRef] [PubMed]
[8] Messenger, S.R., Burke, E.A., Morton, T.L., et al. (2003) Modelling Low Energy Proton Radiation Effects on Solar Cells. Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, Osaka, 11-18 May 2003, 716-719 Vol. 1.
[9] 肖厦子, 宋定坤, 楚海建, 等. 金属材料力学性能的辐照硬化效应[J]. 力学进展, 2015, 45(1): 141-178.
[10] 李东波, 赵冬, 华军. 碳原子辐照损伤后石墨烯拉伸力学性能的温度相关性研究[J]. 西安建筑科技大学学报(自然科学版), 2016, 48(3): 454-458.
[11] 张新辉. GaAs/Ge太阳电池抗电子辐射研究[J]. 电源技术, 2004, 28(1): 17-21.
[12] Mazouz, H., Logerais, P.O., Belghachi, A., et al. (2015) Effect of Electron Irradiation Fluence on the Output Parameters of GaAs Solar Cell. International Journal of Hydrogen Energy, 40, 13857-13865. [Google Scholar] [CrossRef] 
[13] Tunhuma, S.M., Auret, F.D., Legodi, M.J., et al. (2016) The Fine Structure of Electron Irradiation Induced EL2-Like Defects in n-GaAs. Journal of Applied Physics, 119, 5211-5208. [Google Scholar] [CrossRef] 
[14] Wang, J.L., Yi, T.C., Zheng, Y., et al. (2017) Temperature-Dependent Photoluminescence Analysis of 1.0 MeV Electron Irradiation-Induced Nonradiative Recombination Centers in n+-p GaAs Middle Cell of GaInP/GaAs/Ge Triple-Junction Solar Cells. Chinese Physics Letters, 34, 182-184. [Google Scholar] [CrossRef] 
[15] 玛丽娅, 郭旗, 艾尔肯, 等. In(0.22)Ga(0.78)As/GaAs量子阱光致发光谱电子辐照效应研究[J]. 光学学报, 2017(2): 191-198.
[16] 赵慧杰. 低能质子和电子辐照GaAs/Ge太阳电池性能演化及损伤机理[D]: [博士学位论文]. 哈尔滨: 哈尔滨工业大学, 2008.
[17] 孙旭芳, 王荣, 刘运宏, 等. 质子辐照与电子辐照对空间GaAs/Ge太阳电池性能影响比较[J]. 北京师范大学学报(自然科学版), 2006, 42(5): 489-491.
[18] Pursley, B.C., Song, X., Torresisea, R.O., et al. (2015) Robustness of n-GaAs Carrier Spin Properties to 5 MeV Protonirradiation. Applied Physics Letters, 106, 323-217. [Google Scholar] [CrossRef] 
[19] Tan, L.Y., Li, F.J., Xie, X.L., et al. (2017) Study on Irradiation-Induced Defects in GaAs/AlGaAs Core-Shell Nanowires via Photoluminescence Technique. Chinese Physics B, 26, 328-332. [Google Scholar] [CrossRef] 
[20] 刘运宏, 王荣, 孙旭芳. 碳离子辐射对空间GaAs/Ge太阳电池性能影响的研究[J]. 核技术, 2007, 30(4): 259-261.
[21] Deshmukh, P., Singh, A., Pal, S., et al. (2015) Photomixing and Photoconductive THz Generation Improvement in SI-GaAs after Carbon Irradiation. International Conference on Infrared, Millimeter, and Terahertz Waves, Hong Kong, 23-28 August 2015, 1-2. [Google Scholar] [CrossRef] 
[22] Singh, A., Pal, S., Surdi, H., et al. (2015) Carbon Irradiated Semi Insulating GaAs for Photoconductive Terahertz Pulse Detection. Optics Express, 23, 6656-6661. [Google Scholar] [CrossRef] 
[23] Bobby, A., Shiwakoti, N., Sarun, P.M., et al. (2015) Swift Heavy Ion Induced Capacitance and Dielectric Properties of Ni/n-GaAs Schottky Diode. Current Applied Physics, 15, 1500-1505. [Google Scholar] [CrossRef] 
[24] Kapitonov, Y.V., Shapochkin, P.Y., Petrov, Y.V., et al. (2015) Effect of Irradiation by He+ and Ga+ Ions on the 2D-Exciton Susceptibility of InGaAs/GaAs Quantum-Well Structures. Physica Status Solidi, 252, 1950-1954. [Google Scholar] [CrossRef] 
[25] 杨迪, 孙梦利, 袁伟, 等. 离子辐照GaAs的光致发光和拉曼散射研究[J]. 核技术, 2016, 39(10): 17-23.
[26] 杨迪, 彭金鑫, 孙梦利, 等. 重离子注入GaAs辐照损伤研究[J]. 现代应用物理, 2017, 8(1): 56-60.

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