InP/ZnS核壳量子点光学性质研究
Study on the Luminescence Properties of InP/ZnS Quantum Dot
DOI: 10.12677/MS.2018.83016, PDF,    国家自然科学基金支持
作者: 张博文, 王登魁, 方 铉, 房 丹, 王新伟, 唐吉龙, 王晓华, 魏志鹏：长春理工大学高功率半导体激光国家重点实验室，吉林 长春
关键词: 光致发光；InP/ZnS；TEM；界面应力；Photoluminescence； InP/ZnS； TEM； Interface Stress
摘要: InP量子点被认为是最有希望替代Cd基量子点的材料。然而对于InP量子点的制备和性质的研究远远小于Cd基量子点的研究，特别是其光学性方面的研究。本文采用一锅法制备了晶格质量良好，光学性能优异的InP/ZnS量子点，通过TEM图像确认制备出了的InP核的尺寸约为3 nm，晶格间距与闪锌矿结构的InP(111)晶面间距一致；通过变功率的光谱测试以及拉曼测试，认定InP/ZnS中存在两个发光来源，高能端的来源于自由激子的跃迁，低能端的来源于界面应力产生的缺陷。
Abstract: InP-based quantum dots are considered as the most promising candidate for Cd-based QDs. How-ever, the research on the fabricated and properties of InP quantum dots is far less than that of Cd-based QDs, especially their optical properties. In this paper, InP/ZnS quantum dots with good lattice quality and optical properties were prepared by one-pot method. The size of InP core was confirmed to be about 3 nm by TEM image. The lattice spacing was in agreement with that of InP(111). The results of power dependence photoluminescence and Raman spectra show that there are two luminescent sources in the InP/ZnS, the transition from the free energy exciton in the high energy end and the defects in the low energy end originating from the interface stress.
文章引用：张博文, 王登魁, 方铉, 房丹, 王新伟, 唐吉龙, 王晓华, 魏志鹏. InP/ZnS核壳量子点光学性质研究[J]. 材料科学, 2018, 8(3): 131-136. https://doi.org/10.12677/MS.2018.83016

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