Bi3.5Nd0.5Ti3O12铁电薄膜的极化疲劳研究
Study of Polarization Fatigue Rates on Bi3.5Nd0.5Ti3O12 Ferroelectric Thin Films
DOI: 10.12677/MS.2018.84044, PDF,    科研立项经费支持
作者: 曾庆丰：贵州大学物理学院，贵州 贵阳；王明福：深圳新则兴科技有限公司，广东 深圳；成传品, 邓永和：湖南工程学院理学院，湖南 湘潭
关键词: BNT；铁电薄膜；驱动电场；极化疲劳；Bi3.5Nd0.5Ti3O12； Ferroelectric Thin Films； Driving Electric Field； Polarization Fatigue
摘要: 采用溶胶–凝胶法在Pt(111)/Ti/SiO2/Si(100)基底上沉积了Bi3.5Nd0.5Ti3O12(BNT)铁电薄膜。采用铁电分析仪测试铁电极化(P-E)特性、疲劳特性以及漏电流(J-V)特性。结果表明：极化翻转次数越多，驱动电场的频率越低，驱动电场的幅度越大，Bi3.5Nd0.5Ti3O12铁电薄膜的极化疲劳行为越显著。
Abstract: Using Sol-Gel method, Bi3.5Nd0.5Ti3O12 (BNT) ferroelectric thin films was deposited on Pt(111)/Ti/ SiO2/Si(100). The ferroelectric measurements (P-E), fatigue behaviors and leakage current density (J-V) were carried out with a radiant technology precision ferroelectric workstation test system. It is found that more number of cycles, lower frequency and high amplitude of the driving electric field correspond to higher fatigue rates.
文章引用：曾庆丰, 王明福, 成传品, 邓永和. Bi3.5Nd0.5Ti3O12铁电薄膜的极化疲劳研究[J]. 材料科学, 2018, 8(4): 395-400. https://doi.org/10.12677/MS.2018.84044

参考文献

[1] Hu, Z.S., Zhong, X.L., Wang, J.B., Liao, M., Zheng, X.J. and Zhou, Y.C. (2009) Comparison of Ferroelectric Properties of Cosubstituted Bismuth Titanate Films between Bi3.15Nd0.85Ti2.97Mg0.03O12 and Bi3.15Nd0.85Ti2.95Mn0.05O12. Surface Review Letters, 16, 153-158.
[Google Scholar] [CrossRef] 
[2] Hayashi, T., Iizawa, N., Togawa, D., et al. (2004) Preparation and Properties of V-Doped (Bi, Nd)4Ti3O12 Ferroelectric Thin Films by Chemical Solution Deposition Method. Integrated Ferroelectrics, 62, 233-241.
[Google Scholar] [CrossRef] 
[3] Ye, Z., Tang, M.H., Zhou, Y.C., Zheng, X.J., Cheng, C.P., Hu, Z.S. and Hu, H.P. (2007) Electrical Properties of V-Doped Bi3.15Nd0.85Ti3O12 Thin Films with Different Contents. Ap-plied Physics Letters, 90, 082905.
[Google Scholar] [CrossRef] 
[4] Liang, C.S., Wu, J.M. and Chang, M.C. (2002) Ferroelectric BaP-bO3/PbZr0.53Ti0.47/BaPbO3 Heterostructures. Applied Physics Letters, 81, 3624-3626.
[Google Scholar] [CrossRef] 
[5] Sun, H., Zhu, J., Fang, H. and Chen, X.B. (2006) Large Remnant Polari-zation and Excellent Fatigue Property of Vanadium-Doped SrBi4Ti4O15 Thin Films. Journal of Applied Physics, 100, 074102.
[Google Scholar] [CrossRef] 
[6] Sim, C.H., Zhou, Z.H., Gao, X.S., Soon, H.P. and Wang, J. (2008) Ferroelectric and Fatigue Behavior of Bilayered Thin Films. Journal of Applied Physics, 103, 034102.
[Google Scholar] [CrossRef] 
[7] Arias, I., Serebrinsky, S. and Ortiz, M. (2006) A Phenomenological Co-hesive Model of Ferroelectric Fatigue. Acta Materilia, 54, 975-984.
[Google Scholar] [CrossRef] 
[8] Lee, J.K., Yi, J.Y. and Hong, K.S. (2004) Physical Mechanism for Orientation Dependence of Ferroelectric Fatigue in Pb(Zn1/3Nb2/3)O3-5%PbTiO3 Crystals. Journal of Applied Physics, 96, 7471.
[Google Scholar] [CrossRef] 
[9] Stolichnov, I., Tagantsev, A., Setter, N., Cross, J.S. and Tsukada, M. (1999) Top-Interface-Controlled Switching and Fatigue Endurance of (Pb,La)(Zr,Ti)O3 Ferroelectric Capacitors. Applied Physics Letters, 74, 3552-3554.
[Google Scholar] [CrossRef] 
[10] Chon, U., Jang, H.M., Kim, M.G. and Chang, C.H. (2002) Large Perov-skites with Giant Spontaneous for Nonvolatile Memories. Physical Review Letters, 89, 087601.
[Google Scholar] [CrossRef] 
[11] Wong, C.K. and Shin, F.G. (2005) A Possible Mechanism of Anomalous Shift and Asymmetric Hysteresis Behavior of Ferroelectric Thin Films. Applied Physics Letters, 86, 042901.
[Google Scholar] [CrossRef] 
[12] Grossmann, M., Bolten, D., Lohse, O., Boettger, U., Waser, R. and Tiedke, S. (2000) Reversible and Irreversible Processes in Donor-Doped Pb(Zr,Ti)O3. Applied Physics Letters, 77, 3830.
[Google Scholar] [CrossRef] 
[13] Tagantsev, K., Stolichnov, I., Colla, E.L. and Setter, N. (2001) Polarization Fatigue in Ferroelectric Films: Basic Experimental Findings, Phenomenological Scenarios, and Microscopic Features. Journal of Applied Physics, 90, 1387.
[Google Scholar] [CrossRef] 
[14] Mihara, T., Wantanabe, H. and Paz de Araujo, C. (1994) Polarization Fa-tigue Characteristics of Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film Capacitors. Japanese Journal of Applied Physics, 133, 3996-4000.
[Google Scholar] [CrossRef] 
[15] Yang, F., Tang, M.H., Zhou, Y.C., Liu, F., Ma, Y., Zheng, X.J., Tang, J.X., Xu, H.Y., Zhao, W.F. and Sun, Z.H. (2008) Fatigue Mechanism of the Ferroelectric Perovskite Thin Films. Applied Physics Letters, 92, 1400.
[Google Scholar] [CrossRef] 

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