AZO透明导电膜的光电性能研究
Study on the Photoelectric Properties of AZO Transparent Conductive Films
DOI: 10.12677/MS.2018.84045, PDF,    科研立项经费支持
作者: 王 宇, 余云鹏, 王江涌：汕头大学，广东 汕头；张汉焱, 林 钢：汕头超声显示器有限公司，广东 汕头；徐从康：无锡舒玛天科新能源技术有限公司，江苏 无锡
关键词: ZnO；掺杂；溅射；方阻；透过率；ZnO； Doping； Sputtering； Square Resistance； Transmittance
摘要: 本文采用射频磁控溅射法在玻璃衬底表面制备了Al2O3掺杂的ZnO薄膜(AZO膜)，使用四探针薄膜方阻仪、XRD和分光光度计对AZO薄膜光电性能进行了表征分析。研究了制备参数和退火条件对AZO薄膜光电性能的影响，获得了制备高透过率(90%)和低方阻(15 Ω/□) AZO薄膜最佳工艺参数。
Abstract: In this paper, ZnO thin films doped Al2O3 (AZO) were prepared on glass substrate by radio fre-quency magnetron sputtering. The photoelectric properties of AZO thin films were characterized by four-point probe, XRD and spectrophotometer. The optimal sputtering and annealing parameters for the best performance AZO thin films with transmittance up to 90% and square resistance as low as 15 Ω/□ were obtained.
文章引用：王宇, 余云鹏, 张汉焱, 林钢, 徐从康, 王江涌. AZO透明导电膜的光电性能研究[J]. 材料科学, 2018, 8(4): 401-411. https://doi.org/10.12677/MS.2018.84045

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