硅片衬底微粗糙度对外延硅片表面颗粒的影响

The Effect of Silicon Wafer Substrate Micro Roughness on the Surface Particles of the Epitaxial Silicon Wafers

摘要: 通过对单晶硅外延表面反应机理和表面测试分析，发现抛光片表面粗糙程度对外延后0.12 um颗粒分布有影响。表面微粗糙度Ra在0.5~0.8 nm左右，经过外延生长，硅片表面经过颗粒检测仪(SP1)检测会出现0.12 um小颗粒聚集分布，通过工艺调整改进，Ra降低到0.2~0.4 nm，经过外延生长，硅片表面经过颗粒检测仪(SP1)检测发现0.12 um小颗粒聚集消失。

Abstract: Through the analysis of epitaxial surface reaction mechanism and measurement of monocrystalline silicon surface test, it is found that the surface roughness of the wafer affects the particle dis-tribution of 0.12 um., while the surface micro roughness Ra is about 0.5 - 0.8 nm, the 0.12 um small particle accumulation distribution on the surface of Silicon Wafer is detected by particle scanner (SP1) after the epitaxial growth. Through the process adjustment and improvement, the Ra is re-duced to 0.2 - 0.4 nm, the 0.12 um small particle accumulation distribution on the surface of Silicon Wafer is found to disappear after the epitaxial growth.