AZO单层和AZO/Cu/AZO复合层薄膜光电性能的研究
Study on the Photoelectric Properties of AZO and AZO/Cu/AZO Films
DOI: 10.12677/MS.2018.86079, PDF,    科研立项经费支持
作者: 王 宇, 余云鹏, 王江涌：汕头大学物理系，广东 汕头；张汉焱, 林 钢：汕头超声显示器有限公司，广东 汕头；徐从康：无锡舒玛天科新能源技术有限公司，江苏 无锡
关键词: ZnO；掺杂；复合层；溅射；方阻；透过率；ZnO； Doping； Composite Films； Sputtering； Square Resistance； Transmittance
摘要: 本文采用射频磁控溅射法在玻璃衬底表面制备了Al掺杂的ZnO薄膜(AZO膜)及AZO/Cu/AZO复合层薄膜，使用四探针薄膜方阻仪、分光光度计、XRD和辉光放电发射光谱仪对薄膜光电性能及成分进行了表征分析。研究了制备工艺参数和各膜层厚度对单层AZO及AZO/Cu/AZO薄膜光电性能的影响，并在衬底室温条件下制备了方阻低至65 Ω/□、平均透过率达85%的复合层薄膜。
Abstract: In this paper, ZnO thin films doped Al (AZO) and AZO/Cu/AZO films were prepared on glass sub-strates by radio frequency magnetron sputtering. The photoelectric properties and compositions of films were characterized by four-point probe, spectrophotometer, XRD and GDOES. The preparation parameters and thickness values of Cu and AZO were adjusted in order to obtain the optimal performance of monolayer and composite layer films. AZO/Cu/AZO films with square resistance as low as 65 Ω/□ and transmittance up to 85% were obtained at room temperature.
文章引用：王宇, 余云鹏, 张汉焱, 林钢, 徐从康, 王江涌. AZO单层和AZO/Cu/AZO复合层薄膜光电性能的研究[J]. 材料科学, 2018, 8(6): 664-676. https://doi.org/10.12677/MS.2018.86079

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