溅射时间对碲化铅热电薄膜性能的影响
Effect of Sputtering Time on the Properties of PbTe Thermoelectric Thin Film
摘要:
碲化铅是一种窄带隙半导体，具有很高的热电性能系数，较高的熔点和较好的化学稳定性，在中温区(500~900 K)是效率最高的热电材料。目前，提高其热电性能的研究主要集中在合金化掺杂、低维化及制备特殊纳米结构等方面。本文利用磁控溅射的方法，制备了碲化铅基热电薄膜，测量了不同薄膜的Seeback系数。同时研究了溅射时间对薄膜热电性能的影响，为磁控溅射制备碲化铅等热电薄膜的工艺改良和优化提供了方向和思路。
Abstract:
PbTe is a narrow band gap semiconductor. It has high thermoelectric coefficient of performance, high melting point and good chemical stability. It is the most efficient thermoelectric material in the middle temperature region (500~900 K). At present, the research on improving the thermoelectric properties is mainly focused on Alloying doping, low dimension and preparation of special nanostructures. In this paper, the lead based thermoelectric thin film was prepared by magnetron sputtering, and the Seeback coefficient of different thin films was measured. Meanwhile, the effect of sputtering time on the thermoelectric properties of the thin films was studied, which provided directions and ideas for the improvement and optimization of magnetron sputtering technology for preparing thermoelectric thin films such as lead telluride.
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