NO退火对4H-SiC MOS器件栅氧化层TDDB可靠性的影响
Effect of NO Post-Oxide-Annealing on TDDB Reliability of 4H-SiC MOS Oxidation
DOI: 10.12677/SG.2018.83032, PDF,   
作者: 万彩萍*, 王世海, 周钦佩, 许恒宇：中国科学院微电子研究所，北京；王影杰：北方工业大学，北京；张文婷：全球能源互联网研究院有限公司，先进输电技术国家重点实验室，北京
关键词: 4H-SiC；SiC MOS电容；氧化后退火；TDDB；NO；4H-SiC； SiC MOS Capacitors； Post-Oxide-Annealing； TDDB； NO
摘要: 碳化硅(SiC)材料因其独特的物理和化学特性，使得SiC器件在高压大功率领域具有巨大的潜力，但是由于碳元素的存在，SiC MOS器件的栅氧化层可靠性问题一直制约SiC MOSFET器件的发展，影响SiC MOSFET器件性能和可靠性的关键因素。如何提升SiC MOS器件的TDDB可靠性，需要展开系统深入的研究。基于大量的氧化后退火工艺研究基础，氧化后在含氮氛围内退火是较为有效的手段之一，本论文系统研究NO氧化后退火工艺中温度对于4H-SiC MOS器件栅氧化层TDDB (Time-dependent die-lectric breakdown：时间相关介质击穿)可靠性的影响，通过将1350℃干氧氧化后的样品的进行不同温度的一氧化氮(NO)氧化后退火，通过TDDB对比总结氧化后退火工艺对SiC MOS器件栅氧TDDB可靠性的影响，实验结果表明，随着退火温度的增加，栅氧化层寿命逐渐增加，但是均一性却逐渐降低。
Abstract: Silicon carbide (SiC) devices have great potential in high voltage and high power applications as its unique physical and chemical properties. However, due to the presence of carbon, gate oxide reliability of SiC MOS devices has always restricted the development of SiC MOSFET (Mental-Oxide-Semi- conductor Field-Effect Transistor) devices. The reliability of gate oxide is the key factors affecting the performance and reliability of SiC MOSFET. How to improve TDDB reliability of SiC MOS devices requires in-depth system research. Post-Oxide-Annealing (POA) in nitrogen-containing atmosphere is one of the most effective ways to improve the reliability of SiC MOS; it is based on a large number of post-oxide-annealing process research. The paper systematically studied the temperature of NO post-oxidation-annealing effects on 4H-SiC MOS TDDB (Time-dependent dielectric breakdown) reliability. The NO POA experiments is oxide in 1350˚C before annealing at different temperature. The temperature of NO post-oxide-annealing is from 1200˚C to 1300˚C. The influence of oxide post-oxidation annealing process on gate oxide reliability of SiC MOS devices is compared and summarized by TDDB. The experimental results show that with the increase of annealing temperature, the lifetime of gate oxide layer gradually increases, but the equality decreases as well.
文章引用：万彩萍, 王影杰, 张文婷, 王世海, 周钦佩, 许恒宇. NO退火对4H-SiC MOS器件栅氧化层TDDB可靠性的影响[J]. 智能电网, 2018, 8(3): 279-287. https://doi.org/10.12677/SG.2018.83032

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