石墨烯/硒化钼异质结的制备及光电特性的研究
The Preparation and Photoelectric Properties of Graphene/Molybdenum Selenide Heterojunction
DOI: 10.12677/NAT.2018.83005, PDF,    国家自然科学基金支持
作者: 彭 涛*, 管明艳, 徐 铖, 张 强, 许 珂, 朱 琳, 马锡英：苏州科技学院，数理学院，江苏 苏州
关键词: 石墨烯薄膜；MoSe2薄膜；异质结；光伏特性；Graphene Film； MoSe2 Film； Heterojunction； Photovoltaic Characteristics
摘要: 本次实验尝试对石墨烯与硒化钼这两种新型的纳米薄膜材料进行异质结的制备。在利用化学气相沉积(CVD)制备出的MoSe2薄膜上用化学气相沉积制备出石墨烯，然后采用磁控溅射沉积铜(Cu)接触电极，对石墨烯表征并对其性质研究。最后经过必要的工艺步骤下形成石墨烯和MoSe2异质结并检测其光电特性。在标准光源照射下，短路电流约为2.4 nA，开路电压约为4 mV，可知石墨烯/硒化钼异质结可以用于太阳能电池、传感器、发光二极管、激光等领域。有无光照时电流比值约为2.69，可见石墨烯/硒化钼异质结具有良好的光伏特性。
Abstract: In this experiment, the preparation of heterojunctions of two novel nano-film materials, graphene and molybdenum selenide, was attempted. Graphene was prepared by chemical vapor deposition on MoSe2 film prepared by chemical vapor deposition (CVD), and then copper (Cu) contact electrode was deposited by magnetron sputtering. The graphene was characterized and its properties were studied. Finally, graphene and MoSe2 heterojunctions were formed through the necessary process steps and their photoelectric properties were examined. Under the standard light source, the short-circuit current is about 2.4 nA, and the open circuit voltage is about 4 mV. It can be seen that the graphene/selenium molybdenum heterojunction can be used in solar cells, sensors, light-emitting diodes, lasers and the like. The current ratio is about 2.69 with or without light. Visibly, graphene/selenide molybdenum heterojunction has good photovoltaic properties.
文章引用：彭涛, 管明艳, 徐铖, 张强, 许珂, 朱琳, 马锡英. 石墨烯/硒化钼异质结的制备及光电特性的研究[J]. 纳米技术, 2018, 8(3): 31-36. https://doi.org/10.12677/NAT.2018.83005

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