ZnCdSe/ZnS核壳结构量子点层厚度对发光二极管性能的影响
Effect of Thickness of ZnCdSe/ZnS QDs Layer on Performance of QLEDs
DOI: 10.12677/MP.2018.86030, PDF,    科研立项经费支持
作者: 巩合春, 任广义, 赵洪涛, 黄 燕：国家电光源产品监督检验测试中心(河南)，河南 濮阳；李昭函：郑州师范学院，河南 郑州
关键词: 量子点发光二极管；壳层厚度；Quantum Dots Based Light Emitting Diodes； Shell Thickness
摘要: 本文采用旋涂成膜的方法，以ZnCdSe/ZnS核壳结构量子点为发光层，制备了类似三明治结构的ITO/PEDOT:PSS/TFB/QD/ZnO/Al发光器件，系统地研究了不同的旋涂速率对器件光电性能的影响。实验结果表明，随着旋涂速率的降低，器件的电流密度和亮度逐渐下降，启亮电压升高，而EQE随着量子点层厚度的增加呈现出上升的趋势。其中在3000 rpm条件下有最低的启动电压2.2 V，在2000 rpm条件下有最大的EQE 14%。
Abstract: The sandwich-like QLEDs, using ZnCdSe/ZnS as the light-emitting layer, are fabricated by spin-coating. We focus on the effect of spin-coating rate on the performance of QLEDs. With the spin-coating rate decreasing, the current density and luminance of QLEDs decrease, while turn-on voltage rises. And the result shows that the EQE of QLEDs has an increasing trend with thickness of QDs increasing. A lower turn-on voltage (2.2 V) appears at 3000 rpm, while the peak value of EQE (14%) appears at 2000 rpm.
文章引用：巩合春, 任广义, 赵洪涛, 黄燕, 李昭函. ZnCdSe/ZnS核壳结构量子点层厚度对发光二极管性能的影响[J]. 现代物理, 2018, 8(6): 271-276. https://doi.org/10.12677/MP.2018.86030

参考文献

[1] Lee, K.H., Lee, J.H., Song, W.S., et al. (2013) High Efficient, Color-Pure, Color-Stable Blue Quantum Dot Light-Emitting Devices. ACS Nano, 7, 7295-7302. [Google Scholar] [CrossRef] [PubMed]
[2] Anikeeva, P., Steckel, J., Bawendi, M., et al. (2006) Photoluminescence of CdSe/ZnS Core/Shell Quantum Dots Enhanced by Energy Transfer from a Phosphorescent Donor. Chemical Physics Letters, 424, 120-125. [Google Scholar] [CrossRef] 
[3] Geng, W.D., Guo, J., Liu, H.G., et al. (2014) All-Inorganic Colloidal Quantum Dots Display Technology. Chinese Journal of Liquid Crystals and Displays, 29, 479-484. [Google Scholar] [CrossRef] 
[4] Lou, T.G., Hu, L., Wu, D.K., et al. (2012) Electroluminescent Characteristics of CdSe Colloidal Quantum Dots. Journal of Inorganic Materials, 27, 1211-1215. [Google Scholar] [CrossRef] 
[5] Dai, X., Zhang, Z., Jin, Y., et al. (2014) Solution-Processed, High-Performance Light-Emitting Diodes Based on Quantum Dots. Nature, 515, 96-99. [Google Scholar] [CrossRef] [PubMed]
[6] Shen, H., Cao, W., Shewmon, N.T., et al. (2015) High-Efficiency, Low Turn-On Voltage Blue-Violet Quantum-Dot-Based Light-Emitting Diodes. Nano Letters, 15, 1211-1216. [Google Scholar] [CrossRef] [PubMed]
[7] Hu, J.T., Feng, P., Mei, W.J., et al. (2017) Influence of Light Emitting Layer Thickness on the Performance of Quantum Dots LED Based on CdSSe/ZnS Quantum Dots. Semiconductor Optoelectrodics, 38, 493-497.
[8] Li, Z.H., Hu, Y.X., Shen, H.B., et al. (2017) Efficient and Long-Life Green Light-Emitting Diodes Comprising Tridentate Thiol Capped Quantum Dots. Laser & Photonics Reviews, 11, 1600227-1600229. [Google Scholar] [CrossRef] 
[9] Li, Z.H., Chen, F., Wang, L., et al. (2018) Synthesis and Evaluation of Ideal Core/Shell Quantum Dots with Precisely Controlled Shell Growth: Nonblinking, Single Photoluminescence Decay Channel, and Suppressed FRET. Chemistry of Materials, 30, 3668-3676. [Google Scholar] [CrossRef] 
[10] Wang, O.Y., Wang, L., Li, Z.H., et al. (2018) High-Efficiency, Deep Blue ZnCdS/CdxZn1-xS/ZnS Quantum-Dot-Light-Emitting Devices with an EQE Exceeding 18%. Nanoscale, 10, 5650-5657. [Google Scholar] [CrossRef]