电化学刻蚀多孔GaN材料的研究

Study on Electrochemical Etching of Porous GaN Materials

摘要: 通过电化学刻蚀法以KOH作为刻蚀液制备多孔GaN材料。本文主要研究刻蚀电压和刻蚀液浓度两方面对多孔GaN材料形貌的影响，其中刻蚀电压变化范围为10 V~25 V，并以能带模型进行理论分析。刻蚀液浓度变化范围为20%~50%，并着重通过动力学模型进行理论分析。理论分析和实验结果均表明：在电化学刻蚀制备多孔GaN材料时，通过改变刻蚀电压和刻蚀液浓度可以实现对孔尺寸、孔洞率、孔密度等孔形貌的控制。

Abstract: We prepare porous GaN materials by electrochemical etching with KOH as etching solution. This work is mainly about the effect of etching voltage and etching solution concentration on the mor-phology of GaN materials. The etching voltage ranges from 10 V to 25 V, and band model is used for theoretical analysis. We mainly use the dynamic model to analyze the effects of etching solution concentration, which ranges from 20% to 50%. Both theoretical analysis and experimental results indicate that when we prepare porous GaN materials with the method of electrochemical etching, we can control the pore size, porosity, pore density or other pore morphology by changing etching voltage and etching liquid concentration.

文章引用：张桐鹤, 李林, 苑汇帛, 曾丽娜, 张晶, 李再金, 曲轶, 马晓辉, 刘国军. 电化学刻蚀多孔GaN材料的研究[J]. 现代物理, 2018, 8(6): 290-296. https://doi.org/10.12677/MP.2018.86033

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