激光辅助放电等离子体极紫外光源研究进展
Research Progress of Laser Assisted Discharge Produce Plasma Extreme Ultraviolet Source
摘要: 极紫外光刻技术可以制造特征尺寸小于22 nm的芯片，是推动半导体集成电路发展的重要手段。极紫外光源是极紫外光刻系统的重要组成部分。激光辅助放电等离子体极紫外光源方法可以使传统固体靶材作为放电等离子体所需要的材料，其装置结构简单，产生极紫外光源功率高，能够精确控制放电时间和提高放电的稳定性等，具有良好的应用前景。本文系统阐述了激光辅助放电等离子体极紫外光源相关研究进展，介绍靶材作为不同电极极性、不同放电参数和激光参数下放电等离子体极紫外光源的产生，并对不同条件下产生极紫外光源的特点进行了归纳总结，为更好地使用激光辅助放电等离子体进行产生极紫外光源提供有益的参考。
Abstract: Extreme ultraviolet (EUV) lithography is promising technique to manufacture chips with feature sizes less than 22 nm, which is an important means to promote the development of semiconductor integrated circuits. The EUV source is an important part of EUV lithography system. The method of laser assisted discharge plasma EUV source can make the traditional solid target as the material required for discharge plasma, and has advantages of a simple device structure, high power of the EUV source, precise control of discharge time and stability of discharge that make it has good application prospects. This paper discusses the research progress of laser-assisted discharge plasma EUV source, and introduces the generation of EUV source with different target electrode polarity, discharge parameter and pulse laser parameters. The characteristics of producing EUV light source under different conditions are summarized, which provides a useful reference for the better use of laser-assisted discharge plasma to produce EUV light source.
文章引用：吴家志, 谢卓, 窦银萍, 林景全. 激光辅助放电等离子体极紫外光源研究进展[J]. 应用物理, 2019, 9(1): 1-6. https://doi.org/10.12677/APP.2019.91001

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