金属辅助刻蚀制备黑硅形貌及光吸收率的研究
Study on Morphology and Light Absorption Rate of Black Silicon Prepared by MetalAssisted Etching
DOI: 10.12677/MP.2019.91006, PDF,   
作者: 李 旭:长春理工大学理学院,吉林 长春
关键词: 金属辅助化学刻蚀黑硅光吸收率Metal Assisted Chemical Etching Black Silicon Light Absorption Rate
摘要: 进行系统研究以确定银粒子的浓度对金属辅助化学蚀刻(MaCE)制备黑硅时,对黑硅的形貌以及它们的所得的光吸收特性的影响。分别用0.01 mol/L、0.02 mol/L、0.03 mol/L的硝酸银和氢氟酸的混合溶液进行银粒子的沉积,然后使用相同实验参数进行刻蚀来制备N型硅的黑硅结构。通过扫描电镜(SEM)来测试黑硅的表面形貌,用积分球装置测试黑硅的光吸收率。从实验结果上可以观察到,当银粒子沉积过程中银粒子的浓度上升时,在沉积过程中银粒子发生聚集现象,使得所制备的黑硅的孔径变大,在可见光及近红外范围的光吸收率有所提升。
Abstract: Systematic studies were conducted to determine the effect of silver particle concentration on the morphology of black silicon and their resulting light absorption characteristics when preparing black silicon by metal assisted chemical etching (MaCE). Silver particles were deposited by a mixed solution of 0.01 mol/L, 0.02 mol/L, and 0.03 mol/L of silver nitrate and hydrofluoric acid, respectively, and then etched using the same experimental parameters to prepare a black silicon structure of N-type silicon. The surface morphology of black silicon was tested by scanning electron microscopy (SEM), and the light absorption of black silicon was measured using an integrating sphere device. It can be observed from the results that when the concentration of the silver particles are deposited during the silver particles’ increases, the silver particles are aggregated phenomenon during the deposition process, so that the aperture of black silicon produced becomes large, the light absorption rate in the visible and near infrared range improves.
文章引用:李旭. 金属辅助刻蚀制备黑硅形貌及光吸收率的研究[J]. 现代物理, 2019, 9(1): 43-47. https://doi.org/10.12677/MP.2019.91006

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