不同焊料对微盘腔半导体激光器散热的影响
Effect of Different Solders on Heat Dissi-pation of Micro-Disk Cavity Semiconductor Laser
DOI: 10.12677/APP.2019.92010, PDF,    科研立项经费支持
作者: 刘 云, 晏长岭*, 杨静航, 逄 超, 冯 源, 郝永芹, 李 辉, 徐东昕, 张剑家:长春理工大学高功率半导体激光国家重点实验室,吉林 长春
关键词: 微盘腔半导体激光器ANSYS焊料热分析 Micro-Disk Cavity Semiconductor Laser ANSYS Solder Thermal Analysis
摘要: 通过对微盘腔半导体激光器热特性及散热方式的理论分析,建立倒封装微盘腔半导体激光器物理散热模型,针对其在稳态工作下的热特性,利用ANSYS有限元分析软件,分析了三种焊料分别为In、Sn0.2Au0.8、Sn0.48In0.52、以及AlN散热片对微盘腔半导体激光器的散热效果的影响。结果显示,In焊料的散热效果较好,芯片温升为4.506 K;Sn0.48In0.52焊料的散热效果较差,最高温升为6.501 K;Sn0.2Au0.8焊料散热效果较In焊料略差接近0.1 K。AlN散热片的热扩散区域更大,散热效果受散热片尺寸影响比较大。从热膨胀系数、焊料热稳定性以及焊料成本来看,In焊料适用于基础实验,Sn0.2Au0.8适用于要求严格的科研实验或批量生产。
Abstract: Based on the theoretical analysis of thermal characteristics and heat dissipation modes of micro-disk cavity semiconductor lasers, a physical heat dissipation model of inverted encapsulated micro-disk cavity semiconductor lasers is established. Aiming at the thermal characteristics of inverted encapsulated micro-disk cavity semiconductor lasers under steady state operation, the effects of three solders on heat dissipation of micro-disk cavity semiconductor lasers are analyzed by using ANSYS finite element analysis software, namely In, Sn0.2Au0.8, Sn0.48In0.52, and AlN radiators. The results show that the heat dissipation effect of In solder is better, the chip temperature rise is 4.506 K; the heat dissipation effect of Sn0.48In0.52 solder is worse; the maximum temperature rise is 6.501 K; and the heat dissipation effect of Sn0.2Au0.8 solder is slightly worse than that of In solder, but not more than 0.1 K. The heat diffusion area of AlN radiator is larger, and the heat dissipation effect is greatly affected by the size of the radiator. In terms of thermal expansion coefficient, thermal stability of solder and cost of solder, In solder is suitable for general experiments, and Sn0.2Au0.8 is suitable for rigorous scientific research experiments or batch production.
文章引用:刘云, 晏长岭, 杨静航, 逄超, 冯源, 郝永芹, 李辉, 徐东昕, 张剑家. 不同焊料对微盘腔半导体激光器散热的影响[J]. 应用物理, 2019, 9(2): 87-93. https://doi.org/10.12677/APP.2019.92010

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