Eu³⁺掺杂Gd₂O₃-SiO₂纳米复合材料制备与荧光性能研究

Preparation and Luminescent Properties of Eu³⁺ Doped Gd₂O₃-SiO₂ Nanocomposites

摘要: 采用溶胶-凝胶法制备了不同浓度Eu³⁺ (0.1%, 0.3%, 0.5%, 1%, 3%)掺杂的Gd₂O₃-SiO₂纳米复合材料。通过热分析法(DSC-TG)、X射线粉末衍射(XRD)、傅里叶转换红外光谱(FTIR)和场发射扫描电子显微镜(FESEM)等方法分析材料的表面形貌和结构特征，并用荧光光谱仪(PL)分析材料的发光性能。结果表明：样品在400℃开始生成结晶，在1000℃热处理后在非晶基体中形成了磷灰石结构的晶体Gd_9.33(SiO₄)₆O₂，在1250℃生成不同结构的Gd₂O₃-SiO₂晶体。发射光谱中得到在612 nm处得到一个较宽的发射峰，是由于Eu³⁺的⁵D₀→⁷F₂跃迁造成的红光发射带。在1250℃热处理条件下，得到最强发射光峰位于585 nm，属于⁵D₀→⁷F₁的能级变化，且当Eu³⁺离子掺杂浓度达到1%时发光性能最好。

Abstract: Eu³⁺ (0.1%, 0.3%, 0.5%, 1%, 3%) doped Gd₂O₃-SiO₂ phosphor was synthesized by a sol-gel method. The surface morphology and structural characteristics of the material were investigated system-atically by DSC thermal analysis, XRD, FTIR and FESEM, and the luminescence properties of the material were analyzed by PL. The results show that the sample begins to crystallize at 400˚C. After heat treatment at 1000˚C, the apatite structure of crystal Gd_9.33(SiO₄)₆O₂ is formed in the amorphous matrix. Different structures of Gd₂O₃-SiO₂ crystals were formed at 1250˚C. A broad emission peak at 612 nm was obtained in the phosphor emission spectrum due to the red emission band due to the transition of ⁵D₀→⁷F₂ of Eu³⁺. Under the heat treatment condition of 1250˚C, the strongest emission peak is obtained, which is located at 585 nm and belongs to the energy level change of ⁵D₀→⁷F₁. Furthermore, the luminescent properties are the best, when Eu³⁺ concentration is 1%.