生长在类单晶硅片上的Ni81Fe19薄膜的微结构和磁性能研究
Microstructure and Magnetic Properties of Ni81Fe19Thin Films on Cast Mono-Silicon Substrates
DOI: 10.12677/APP.2019.96036, PDF,  被引量    科研立项经费支持
作者: 王 禹*, 徐思晨*, 朱齐山, 汤如俊*：苏州大学物理科学与技术学院，江苏省薄膜重点实验室，江苏 苏州；邹 帅*：苏州大学物理科学与技术学院，江苏省薄膜重点实验室，江苏 苏州;加拿大太阳能公司，江苏 苏州；彭 斌*, 张万里：电子科技大学，电子薄膜与集成器件国家重点实验室，四川 成都
关键词: 类单晶硅片；NiFe；磁性； Cast Mono-Silicon； NiFe； Magnetic Properties
摘要: 本文研究了生长在类单晶硅片上Ni81Fe19薄膜的微观结构和磁学性能。结果表明Ni81Fe19的表面形貌与类单晶硅片的表面形貌一致，具有高度的织构取向。Ni81Fe19的矫顽力与剩磁比随薄膜厚度的增加而增加。其厚度达到40 nm后，其矫顽力与剩磁比达到饱和。对薄膜进一步的真空退火的结果显示薄膜的磁性无显著变化，这表明其磁性主要由基板的表面微结构而不是制备条件决定。上述结果有助于在类单晶硅器件上更好地集成Ni81Fe19薄膜。
Abstract: In this paper, the microstructure and magnetic properties of Ni81Fe19 films deposited on cast mono-silicon substrates (CM-Si) were investigated. The results show that the surface morphology of Ni81Fe19 films is consistent with the surface morphology of the CM-Si. The coercivity and remanence ratio increase with increasingNi81Fe19 thickness. When the thickness of Ni81Fe19 is larger than 40 nm, the coercivity and remanence ratio are saturated. The magnetic properties of the annealed film are almost same as that of as-deposited film. This indicates that the magnetic properties of the film are mainly determined by the surface microstructure of the substrate rather than the fabrication conditions. The above results may contribute to a better integration of the Ni81Fe19film on the CM-Si devices.
文章引用：王禹, 邹帅, 徐思晨, 朱齐山, 彭斌, 张万里, 汤如俊. 生长在类单晶硅片上的Ni81Fe19薄膜的微结构和磁性能研究[J]. 应用物理, 2019, 9(6): 300-304. https://doi.org/10.12677/APP.2019.96036

参考文献

[1] Leng, Q.W., Leng, H., Mao, M., Hiner, C. and Ryan, F. (2000) Magnetic Dead Layers in NiFe/Ta and NiFe/Si/Diamond-Like Carbon Films. Journal of Applied Physics, 87, 6621-6623. [Google Scholar] [CrossRef] 
[2] Volkerts, J.P. (2012) Magnetic Thin Films: Properties, Performance, and Applications. Nova Science Publishers Inc., Hauppauge.
[3] Kim, J., Sheng, P., Takahashi, S., Mitani, S.J. and Hayashi, M. (2016) Spin Hall Magnetoresistance in Metallic Bilayers. Physical Review Letters, 116, Article ID: 097201. [Google Scholar] [CrossRef] 
[4] Zhang, W.X., Peng, B., Han, F.B., Wang, Q.R., Soh, W.T., Ong, C.K. and Zhang, W.L. (2016) Separating Inverse Spin Hall Voltage and Spin Rectification Voltage by Inverting Spin Injection Direction. Applied Physics Letters, 108, Article ID: 102405. [Google Scholar] [CrossRef] 
[5] Zou, S., Ye, X.Y., Wu, C.K., Cheng, K.X., Fang, L., Tang, R.J., Shen, M.R., Wang, X.S. and Su, X.D. (2019) Complementary Etching Behavior of Alkali, Metal-Catalyzed Chemical, and Post-Etching of Multicrystalline Silicon Wafers. Progress in Photovoltaics: Research and Applications, 27, 511-519. [Google Scholar] [CrossRef] 
[6] Masahiro, Y., Wataru, K. and Yasushi, E. (2012) On-Chip Intra Decoupling Measurements for Integrated Magnetic Thin Film. IEEE Transactions on Magnetics, 48, 4394-4397. [Google Scholar] [CrossRef] 
[7] Fathabadi, H. (2018) Effect of External AC Electric and Magnetic Fields on the Power Production of a Silicon Solar Cell. IEEE Journal of Photovoltaics, 8, 1408-1412. [Google Scholar] [CrossRef] 
[8] Leng, Q.W., Han, H., Mao, M., Hiner, C. and Ryan, F. (2000) Magnetic Dead Layers in NiFe/Ta and NiFe/Si/Diamond-Like Carbon Films. Journal of Applied Physics, 87, 6621-6623. [Google Scholar] [CrossRef] 

为你推荐