摘要: 伴随着智能电子商品的迅猛发展，寻求一种新的成本低廉的透明导电薄膜来替代ITO薄膜已成为人们的研究热点。网栅银膜和纳米银线薄膜(AgNWs)由于高载流子浓度、高变形伸长率和耐氧化的特点，在微电子、触控等许多领域有广阔的应用前景，成为近年来广泛研究的多功能材料之一。本文介绍了两种透明导电银膜的薄膜结构、制备工艺、光电性能及发展现状，说明了网栅银膜的图形结构设计及不同网栅结构的特点及应用场景，测试对比了两种透明导电银膜的透光率、方阻、电磁屏蔽效能。结果显示纳米压印工艺制备的网栅银膜光电性能最优异，同时该技术自主可控。
Abstract:
With the rapid development of intelligent electronic products, finding a new low-cost transparent conductive film to replace ITO film has become a research hotspot. Due to the high carrier con-centration, high deformation elongation and oxidation resistance, the silver mesh film and silver nanowires film have broad application prospects in many fields such as microelectronic and touch screens. In recent years, silver mesh film and silver nanowires film have been studied widely be-cause of the optoelectronic properties. The structure, preparation methods, optoelectronic prop-erties and current situation of the two silver transparent conductive films are introduced. The structure design of silver mesh film is illustrated in this paper, the characteristics and application scenarios of different mesh structures are also explained. Finally, we tested the transmittance, square resistance and electromagnetic shielding effectiveness of the two silver transparent con-ductive films. The experimental results show that the optoelectronic property of the silver mesh film prepared by nanoimprint method is better, meanwhile the nanoimprint technology is self-controllable.