硫化钨薄膜的制备及光电特性研究
Preparation and Photoelectric Properties of Tungsten Disulfide (WS2) Films
摘要: 以硫化钨(WS2)饱和溶液为原料，氩气为输运气体，采用化学气相沉积法(CVD)在硅衬底上制备了大面积均匀的硫化钨薄膜。利用X射线衍射和原子力显微镜分析了薄膜的晶体结构及表面形貌，发现该方法生长的WS2薄膜结晶性良好，表面大面积均匀。并利用分光光度计测量了薄膜的光吸收特性，研究发现样品在737 nm附近有很强的光吸收。最后，研究了硫化钨薄膜与硅衬底形成的WS2/Si异质结的I-V特性曲线，发现该异质结器件具有良好的伏安特性；另外，光照下，该异质结在可见光区具有显著的光伏效应，说明可用于制备新型硫化钨二维光电子器件。
Abstract: A large-area uniform WS2 thin film was prepared on Si substrate by chemical vapor deposition (CVD) using WS2 saturated solution as raw material and argon as transport gas. The crystal structure and surface morphology of the films were analyzed by X-ray diffraction and atomic force microscopy. It was found that WS2 films grown by this method had good crystallinity and large area uniformity. The absorption characteristics were measured by a spectrophotometer, and it was found that the sample had strong light absorption near 737 nm. Finally, the I-V characteristic curve of WS2/Si heterojunction formed by tungsten sulfide thin film and silicon substrate was studied. It was found that the heterojunction device had good volt-ampere characteristics. In addition, the heterojunction had significant photovoltaic effect in the visible region under illumination, which indicated that it could be used to fabricate novel tungsten sulfide two-dimensional photoelectronic devices.
文章引用：许珂, 丁馨, 徐铖, 朱琳, 桑雨欣, 马锡英. 硫化钨薄膜的制备及光电特性研究[J]. 纳米技术, 2019, 9(3): 101-106. https://doi.org/10.12677/NAT.2019.93012

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