一种限域生长有机半导体晶体的方法
A Method for Growing Organic Semiconductor Crystals in Limited Area
DOI: 10.12677/NAT.2020.101001, PDF,  被引量    国家自然科学基金支持
作者: 于亚民*：北京邮电大学，理学院，北京；中国科学院化学研究所，有机固体研究室，北京分子科学国家实验室，北京；张 茜：中国科学院化学研究所，有机固体研究室，北京分子科学国家实验室，北京
关键词: 有机半导体晶体；晶核；场效应晶体管；Organic Semiconductor Crystal； Crystal Nucleus； Field-Effect Transistors
摘要: 通过预先采用真空蒸镀法在特定位置植入晶核，可以调控有机半导体晶体在后续物理气相传输过程中在特定位置生长。通过热处理和溶剂涮洗可以有效降低晶核的密度，从而实现了大面积有机半导体晶体阵列的制备。基于所得到的有机半导体晶体，用转移金膜的方法制备了底栅顶接触的有机场效应晶体管，器件的迁移率为1.48 cm2 V−1s−1。
Abstract: By seeding crystal nucleus in specific place via thermal evaporation in advance, organic semiconductor crystals could be controlled to deposit at corresponding place in the latter physical vapor transport process. Large arrays of organic semiconductor crystals are produced by using this method. By optimizing the density of crystal nucleus through thermal annealing or rinsing in solvent, arrays with desired crystal density on specific locations are realized. Field-effect transistors based on the obtained organic semiconductor crystals are fabricated with bottom-gate top-contact configuration using the method of transferring Au film. The devices show good performance with mobility of 1.48 cm2 V−1 s−1.
文章引用：于亚民, 张茜. 一种限域生长有机半导体晶体的方法[J]. 纳米技术, 2020, 10(1): 1-6. https://doi.org/10.12677/NAT.2020.101001

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