大尺寸二硒化锡二维晶体的生长和结构研究
Growth and Structure of Large-Scale Two-Dimensional SnSe2 Crystals
摘要: 二维二硒化锡是一种新兴的层状半导体材料，因其优异的光电特性和热电性能，吸引了越来越多的关注，而且在光电器件和能源存储等领域彰显出广阔的应用前景。目前，高质量薄层和大尺寸二硒化锡二维晶体的可控制备仍然存在较大挑战。本文工作中，我们采用化学气相沉积法制备二硒化锡，考察了衬底温度和载气流量等条件对生长的影响，获得了优化的生长条件和大尺寸的二硒化锡晶片，进一步结合光学显微镜、原子力显微镜以及拉曼光谱等表征手段，分析了所制备的几种典型晶片的结构特性，实验结果为高质量二硒化锡二维晶体的可控制备提供了参考。
Abstract: Two-dimensional SnSe2, a newly emerging layered semiconductor material, has attracted increasing attention recently due to its outstanding photoelectric and thermoelectric properties as well as potential applications in optoelectronic and energy storage devices. So far the preparation of high-quality and large-scale SnSe2 two-dimensional crystals is still a challenge. In the present work, we demonstrate the successful fabrication of large-scale SnSe2 flakes by chemical vapor deposition. The effects of substrate temperature and carrier gas on the growth of SnSe2 have been investigated, and the optimized growth conditions have been obtained. The as-grown SnSe2 flakes have been characterized by using optical microscopy, atomic force microscopy and Raman spectroscopy. The results provide a valuable reference for the controllable preparation of high-quality SnSe2 two-dimensional crystals.
文章引用：郑韬, 林高翔, 周颖慧. 大尺寸二硒化锡二维晶体的生长和结构研究[J]. 材料科学, 2020, 10(5): 348-354. https://doi.org/10.12677/MS.2020.105043

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