集成电路刻蚀用硅部件加工及最新发展

Silicon Parts Used in Ic Etching Manufacture and New Development

摘要: 集成电路芯片28 nm以下特别是7 nm线宽不仅对大硅片各项性能要求越来越高，对刻蚀机上用的硅部件也提出了更严格的要求，例如硅环表面的均匀性，硅电极微孔内壁机械损伤和微孔表面形貌等。在加工方法上，7 nm线宽用硅部件将采取更精细化的加工，用多步精磨削代替磨片，不仅可以提高平面度和粗糙度，还可以减少表面特别是亚表面的损伤层；硅电极采用改进后的打孔方式，解决微孔内壁机械损伤的问题，同时采取特殊的损伤检测方法来指导制造工艺的优化。本文对硅部件产品的加工流程进行了论述，指出了硅部件加工的最新发展趋势。

Abstract: The line width below 28 nm, especially 7 nm, not only requires higher performance of large silicon wafers, but also puts forward higher requirements for silicon parts used in etching tool, such as the uniformity of the surface of silicon ring, mechanical damage and morphology of silicon electrode hole, etc. Silicon parts for 7 nm line width will need more refined process, and multi-step precision grinding instead of lapping, which can not only improve the flatness and roughness, but also reduce the damage layer on the surface, especially the sub-surface. We can use an improved drilling method to solve the problem of mechanical damage. This paper discusses the processing flow of silicon parts and points out the latest development of silicon parts.