八苯基笼型倍半硅氧烷/聚酰亚胺低介电材料的制备和性能研究
Preparation and Properties of OPPOSS/Polyimide Materials with Low Dielectric Constants
DOI: 10.12677/MS.2020.109088, PDF,    科研立项经费支持
作者: 贺国文, 杨泛明, 马德崇, 吴 丹, 张 劲：湖南城市学院，材料与化学工程学院，全固态储能材料与器件湖南省重点实验室，湖南 益阳
关键词: 聚酰亚胺；介电常数；八苯基倍半硅氧烷；吸水性；Polyimide； Dielectric Constants； OPPOSS； Water Absorption
摘要: 本论文以4,4,-二氨基二苯醚(ODA)和3,3',4,4,-二甲酮四羧酸二酐(BTDA)为原料，成功制备了一系列不同八苯基笼型倍半硅氧烷(OPPOSS)含量的聚酰亚胺(PI)复合薄膜。对材料的形貌、性能进行了较为系统的研究，结果表明，OPPOSS在PI基体中得到了很好的分散，随着OPPOSS含量的增加，材料的吸水率略有增加，但仍能满足其在微电子行业中的应用。材料的介电常数随着OPPOSS含量的增加而得到有效降低。OPPOSS含量分别为1%和10%的PI介电常数为3.12和1.94，相比纯PI的介电常数(3.56)分别下降了12.4%和45.5%。当OPPOSS含量较高时，材料具有超低介电常数，可望在纳电子器件中得到应用。
Abstract: In this thesis, a series of polyimide (PI) composite films with different octaphenylcagesilsesqui-oxane (OPPOSS) contents were successfully prepared, in which 4,4’-diaminodiphenyl ether (ODA) and 3,3’,4,4’-dimethylketonetetracarboxylicdianhydride (BTDA) were used as raw materials. The morphology and properties of the materials were systematically studied. The results show that OPPOSS is well dispersed in PI matrix, and the water absorption of the material increases slightly with the increase of OPPOSS content, but it can be used in microelectronics industry. However, the dielectric constant (ε) of the composites decreases greatly with the increase of OPPOSS content. The ε of composites with 1% and 10% OPPOSS was 3.12 and 1.94, which was 12.4% and 45.5% lower than that of pure PI (3.56). When the content of OPPOSS is high, the material has ultra-low dielectric constant, which is expected to be used in nano electronic devices.
文章引用：贺国文, 杨泛明, 马德崇, 吴丹, 张劲. 八苯基笼型倍半硅氧烷/聚酰亚胺低介电材料的制备和性能研究[J]. 材料科学, 2020, 10(9): 737-743. https://doi.org/10.12677/MS.2020.109088

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