改善200 mm晶圆边缘加工产能的工艺研究
Process Research to Improve the Edge Pro-cessing Capacity of 200 mm Wafers
摘要: 本文根据硅片边缘磨削原理，从吸盘转速、倒角轮转速、边抛效率等方面对200 mm硅片进行分析研究，进而得出不同的加工工艺条件对硅片边缘质量及加工产能的影响，从而达到提升加工产能的目的。
Abstract:
In this paper, the 200 mm silicon wafers are analyzed and studied from the principle of silicon wafer edge grinding, the chuck speed, the chamfering wheel speed and the edge polishing efficiency. Then, the influence of different processing conditions on the edge quality and processing capacity of silicon wafer is obtained, so we can improve the processing capacity easily.
参考文献
|
[1]
|
苗利刚. 硅片倒角工艺研究[J]. 科协论坛, 2012(2): 49-50.
|
|
[2]
|
张厥宗. 硅单晶抛光片的加工技术[M]. 北京: 化学工业出版社, 2005: 103.
|
|
[3]
|
李战国. 硅片倒角磨轮的研究[J]. 科协论坛, 2012(5): 54-55.
|
|
[4]
|
康洪亮. 影响硅片倒角加工效率的工艺研究[J]. 中国新技术新产品, 2015(15): 51-52.
|
|
[5]
|
贺敬良. 晶片边缘磨削控制方法研究[J]. 半导体技术, 2009, 34(4): 307-310.
|