Cl掺杂SnSe单晶制备和热电性能研究
Growth and Thermoelectric Properties of Cl Doped SnSe Single Crystal
DOI: 10.12677/MS.2020.1011106, PDF,    科研立项经费支持
作者: 李康银, 斯剑霄*, 方文强, 申彤：浙江师范大学，物理与电子信息工程学院，浙江 金华
关键词: SnSe单晶；布里奇曼法；Cl掺杂；热电性能；SnSe Single Crystal； Bridgman Method； Cl Doped； Thermoelectric Properties
摘要: 采用布里奇曼法(Bridgman)制备了Cl掺杂的n型SnSe单晶热电材料，研究了Cl的掺杂量对SnSe1-xClx(x = 0, 0.02, 0.025, 0.03, 0.04)样品的热电性能的影响。结果表明，Cl的掺入可以实现SnSe单晶从p型到n型的转变。当x = 0.03时，SnSe0.97Cl0.03样品的电子浓度提高到5.1 × 1018 cm−3，样品表现出高的电导率和迁移率。在323 K温度下功率因子(PF)达到17.8 uWcm−1K−2。在323 K - 773 K温度范围内的平均ZT值达到0.72，为不掺杂SnSe单晶样品的3.8倍，表明Cl掺杂可以有效改善低温段n型SnSe单晶的热电性能。
Abstract: Single crystals of Cl doped n-type SnSe were grown by Bridgman method and the effect of Cl doing on thermoelectric properties of SnSe single crystal samples was investigated. The results showed that the transition of p type to n type in SnSe single crystal was observed with the increase Cl con-tent. The electron concentration was raised to 5.1 × 1018 cm−3 in SnSe0.97Cl0.03 sample, which pro-cessed high electric conductivity and mobility. The sample with x = 0.03 obtained a high power factor of 17.8 uWcm−1K−2 at 323 K. In the temperature range of 323 K to773 K, the average ZT of 0.72 was reached that is approximately 3.8 times higher than that of undoped SnSe sample. The results indicated that Cl doping could effectively enhance thermoelectric performance of SnSe single crystal at low temperatures.
文章引用：李康银, 斯剑霄, 方文强, 申彤. Cl掺杂SnSe单晶制备和热电性能研究[J]. 材料科学, 2020, 10(11): 877-884. https://doi.org/10.12677/MS.2020.1011106

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