Te/Pb0.985Mn0.015Te异质结生长行为研究
Study on the Growth Behavior of Te/Pb0.985Mn0.015Te Heterojunction
摘要: 研究金属与PbMnTe薄膜界面的形成机理及结构特性对PbMnTe功能器件的应用具有重要的意义。本文利用分子束外延在BaF22(111)基底上制备了高质量Pb0.985Mn0.015Te单晶薄膜，在此基础上，系统研究了Te在Pb0.985Mn0.015Te单晶薄膜表面的生长行为。结果表明当在Pb0.985Mn0.015Te薄膜表面沉积一层Te时，Te将会跟最表面的Pb结合形成原子层平整度表面；当沉积的Te薄膜厚度大于1 ML时，Te在Pb0.985Mn0.015Te薄膜螺旋台阶边缘成核形成Te团簇，随着沉积厚度的增加，这些Te团簇不断长大，之后相互融合形成绕着台阶线盘旋的连续的螺旋线状Te岛。
Abstract: It is of great significance for the application of PbMnTe functional devices to study the formation mechanism and structure characteristics of metal-PbMnTe thin film interface. In this paper, a high quality Pb0.985Mn0.015Te crystalline thin film was prepared on BaF22(111) substrate by molecular beam epitaxy. On this basis, the growth behavior of Te on the surface of Pb0.985Mn0.015Te crystalline thin film was systematically studied. The results show that when 1ML Te is deposited on the surface of Pb0.985Mn0.015Te thin film, Te will combine with the most superficial Pb to form the flatness surface of atomic layer. When the thickness of deposited Te film is greater than 1 ML, Te nucleates at the edge of spiral step of Pb0.985Mn0.015Te film and forms Te clusters. With the increase of deposition thickness, these Te clusters grow continuously, and then converge with each other to form continuous spiral linear Te islands circling around the step line.
文章引用：唐曙锋, 潘媛媛, 王子龙, 周佩聪, 牛逸潇, 郑双羽, 姚育鹏, 王舒凯, 吴青书, 严正博, 吴海飞. Te/Pb0.985Mn0.015Te异质结生长行为研究[J]. 材料科学, 2020, 10(11): 916-920. https://doi.org/10.12677/MS.2020.1011110

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