SnO/AlN压电门控二维复合薄膜场效应晶体管的制备及电学特性
Preparation and Electronic Properties of Piezopotential Gated Two-Dimensional SnO/AlN Composite Thin Film FETs
DOI: 10.12677/MS.2021.111005, PDF,    国家自然科学基金支持
作者: 张 哲, 李梦轲*, 韩 月, 姜 珊, 刘 俊, 柳 婕, 刘 阳, 李 旺：辽宁师范大学物理与电子技术学院，辽宁 大连
关键词: SnO；AlN；压电特性；场效应晶体管；SnO； AlN； Piezoelectric Properties； FTEs
摘要: 采用磁控溅射掩膜沉积技术，在n型Si衬底上制备了底栅型SnO/AlN压电门控二维复合薄膜场效应晶体管，利用XRD、SEM和EDX分析设备，对复合薄膜的晶体结构、形貌和成分进行了分析研究。实验发现，溅射沉积工艺可制备出表面光滑，质量较好的SnO和AlN单晶薄膜。利用AlN薄膜的压电特性，可将施加在AlN薄膜上的外应力转化为门控电压，并作用在SnO/AlN复合膜的SnO沟道上，使器件IDS电流随外部应力变化而改变。测试发现，器件对外应力表现出了较好的响应特性，并具有较高的响应灵敏度，灵敏度约为1.564 × 103 μA/N∙cm2，响应时间约为0.9 s。本文提出的新型底栅型SnO/AlN压电门控二维复合薄膜场效应晶体管，有望应用在柔性电子器件和可穿戴电子产品等领域。
Abstract: The bottom gate type and piezoelectric gated SnO/AlN two-dimensional composite thin film FETs were prepared on n-type Si substrates with masked magnetron sputtering deposition technology. And the crystalline structure, morphology and composition of the synthesized thin films were an-alyzed by XRD, SEM and EDX analysis equipment, respectively. It was found the synthesized SnO and AlN thin films with smooth surface and higher single crystal growth trend. By using the piezo-electric characteristics of the AlN thin film deposited on the SnO thin film, the external stress ap-plied on the AlN thin film can be transformed into gated voltage and acted on the p-type SnO sem-iconductor channel of SnO/AlN composite thin film FETs. It can result in the IDS current of the FET devices to change with the increases or decreases of the external stress. Our research found that the synthesized SnO/AlN composite thin film FETs had a better response characteristic and sensitivity, with a sensitivity of about 1.564 × 103 μA/N∙cm2 and a response time of about 0.9 s. The new type of piezoelectric gated two-dimensional SnO/AlN composite thin film FETs proposed in this paper is expected to be applied in the fields of flexible electronic devices and wearable electronic products.
文章引用：张哲, 李梦轲, 韩月, 姜珊, 刘俊, 柳婕, 刘阳, 李旺. SnO/AlN压电门控二维复合薄膜场效应晶体管的制备及电学特性[J]. 材料科学, 2021, 11(1): 31-39. https://doi.org/10.12677/MS.2021.111005

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