液相前驱体制备单层MoS2薄膜
Preparation of Monolayer MoS2 Film from Liquid Precursor
DOI: 10.12677/CMP.2021.102008, PDF,   
作者: 曹邦麟, 任启源, 叶子萌, 王泽高*：四川大学，材料学院，四川 成都
关键词: 液相前驱体；单层；单晶；MoS2；Liquid Precursor； Mono-Layer； Single Crystal； MoS2
摘要: MoS2薄膜生长主要通过化学气相沉积法来制备，本文使用液相金属前驱体替换传统的粉末原料，有效控制了生长基片表面的形核密度，提高了基片表面样品均匀度。并对生长过程中的基片前处理工艺、反应温度和时间、气压、前驱体量以及基片堆叠结构进行了系统的研究。通过优化制备工艺，实现了单层、单晶MoS2薄膜的可控制备，其单晶畴尺寸达到30 μm。
Abstract: MoS2 film growth is mainly prepared by chemical vapor deposition (CVD). In this paper, liquid metal precursors are used to replace traditional powder materials, which effectively control the nucleation density on the growth substrate surface and improve the uniformity of the substrate surface sample. And the substrate pretreatment process, reaction temperature and time, air pressure, precursor volume and substrate stack structure in the growth process were systematically studied. By optimizing the preparation process, the controllable preparation of mono-layer, single-crystal MoS2 films was realized, and the single-crystal domain size reached 30 μm.
文章引用：曹邦麟, 任启源, 叶子萌, 王泽高. 液相前驱体制备单层MoS2薄膜[J]. 凝聚态物理学进展, 2021, 10(2): 66-71. https://doi.org/10.12677/CMP.2021.102008

参考文献

[1] Chen, J., Tang, W., Tian, B., et al. (2016) Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates. Advanced Science, 3, Article ID: 1500033. [Google Scholar] [CrossRef] [PubMed]
[2] Lee, Y.-H., Zhang, X.-Q., Zhang, W., et al. (2012) Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition. Advanced Materials, 24, 2320-2325. [Google Scholar] [CrossRef] [PubMed]
[3] Lee, Y.T., Choi, W.K. and Hwang, D.K. (2016) Chemical Free Device Fabrication of Two Dimensional van der Waals Materials Based Transistors by Using One-Off Stamping. Applied Physics Letters, 108, Article ID: 253105. [Google Scholar] [CrossRef] 
[4] Gong, Y., Lin, J., Wang, X., et al. (2014) Vertical and In-Plane Heterostructures from WS2/MoS2 Monolayers. Nature Materials, 13, 1135-1142. [Google Scholar] [CrossRef] [PubMed]
[5] Wang, S., Pacios, M., Bhaskaran, H., et al. (2016) Substrate Control for Large Area Continuous Films of Monolayer MoS2 by Atmospheric Pressure Chemical Vapor Deposition. Nanotechnology, 27, Article ID: 085604. [Google Scholar] [CrossRef] [PubMed]
[6] Zhou, H., Wang, C., Shaw, J., et al. (2014) Large Area Growth and Electrical Properties of p-Type WSe 2 Atomic Layers. Nano Letters, 15, 707-713.
[7] Lee, J., Pak, S., Giraud, P., et al. (2017) Thermodynamically Stable Synthesis of Large-Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n-n Heterojunction Devices. Advanced Materials, 29, Article ID: 1702206. [Google Scholar] [CrossRef] [PubMed]
[8] Choi, S.H., Kwon, S.B., Kang, B.K., et al. (2021) Influence of Bi2O3 Co-Doping on Cr-Doped ZnGa2O4 Red Persistent Phosphors Synthesized by a Liquid Phase Precursor Process. Journal of Luminescence, 234, Article ID: 117945. [Google Scholar] [CrossRef] 
[9] Lim, Y.-F., Priyadarshi, K., Bussolotti, F., et al. (2018) Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier. ACS Nano, 12, 1339-1349.

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