GaAs基1.55微米自组织InAs量子点材料生长研究进展
Research Progress on the Growth of 1.55 μm Self-Assembled InAs Quantum Dots Based on GaAs
DOI: 10.12677/MP.2021.114012, PDF,    国家自然科学基金支持
作者: 曾丽娜, 杨云帆, 李林, 刘兆悦, 李再金, 赵志斌, 陈浩, 乔忠良, 曲轶, 刘国军：海南师范大学物理与电子工程学院，海南省激光技术与光电功能材料重点实验室，海南 海口；秦振：吉林大学教育技术中心，吉林 长春
关键词: 外延生长；InAs量子点；应变减小层；1.55微米；Epitaxial Growth； InAs Quantum Dots； Strain Reducing Layer； 1.55 μm
摘要: 光纤通讯用GaAs基高性能1.55微米量子点激光器引起了人们的广泛关注。然而，由较大晶格失配引起的应变、位错等缺陷，导致GaAs基InAs量子点材料的光增益严重降低。目前利用低温外延生长，InGaAs或AlGaAsSb缓冲层，GaAsSb盖层，高In组分InGaAs应变减小层技术，以及引入Sb元素，能拓展InAs量子点的发光波长至1.55微米，然而量子点表面和界面缺陷导致发光特性严重变差。Sb对InAs量子点材料的缺陷、面密度、均匀性及光学特性均有影响。
Abstract: There has been considerable interest in the development of high performance 1.55 µm quantum dots (QDs) lasers based on GaAs for optical communications. However, the optical gain of GaAs-based InAs quantum dot materials seriously decrease due to the large lattice mismatch de-fects such as strains and dislocations. Currently using low-temperature epitaxial growth, InGaAs or AlGaAsSb buffer layer, GaAsSb cap layer, high In composition InGaAs strain reduction layer, and the cooperation of Sb element can expand the emission wavelength of InAs dots up to 1.55 microns. However, the surface and interface defects of the QDs cause serious deterioration of the Photolu-minescence. Sb element affects the InAs QDs material defects, density, uniformity and optical properties.
文章引用：曾丽娜, 杨云帆, 秦振, 李林, 刘兆悦, 李再金, 赵志斌, 陈浩, 乔忠良, 曲轶, 刘国军. GaAs基1.55微米自组织InAs量子点材料生长研究进展[J]. 现代物理, 2021, 11(4): 88-97. https://doi.org/10.12677/MP.2021.114012

参考文献

[1] Sakuma, Y., Takemoto, K., Hirose, S., Usuki, T. and Yokoyama, N. (2005) Controlling Emission Wavelength from InAs Self-Assembled Quantum Dots on InP (0 0 1) during MOCVD. Physica E: Low-Dimensional Systems and Nanostructures, 26, 81-85. [Google Scholar] [CrossRef] 
[2] Zhang, X.B., Ryou, J.H. and Dupuis, R.D. (2006) Growth of InAlAs Self-Assembled Quantum Dots on InAlGaAs/InP for 1.55 μm Laser Applications by Metalorganic Chemical Vapor Deposition. Applied Physics Letters, 89, Article ID: 191104. [Google Scholar] [CrossRef] 
[3] Gilfert, C., Ivanov, V., Oehl, N., Yacob, M. and Reithmaier, J.P. (2011) High Gain 1.55 μm Diode Lasers Based on InAs Quantum Dot Like Active Regions. Applied Physics Letters, 98, Article ID: 201102. [Google Scholar] [CrossRef] 
[4] Semenova, S.E., Kulkova, I.V., Kadkhodazadeh, S., Schubert, F.M. and Yvind, K. (2012) Metal Organic Vapor-Phase Epitaxy of InAs/InGaAsP Quantum Dots for Laser Applications at 1.5 μm. Applied Physics Letters, 99, Article ID: 101106. [Google Scholar] [CrossRef] 
[5] Akahane, K. and Yamamoto, N. (2013) Fabrication of Low-Density Self-Assembled InAs Quantum Dots on InP(311)B Substrate by Molecular Beam Epitaxy. Journal of Crystal Growth, 378, 450-453. [Google Scholar] [CrossRef] 
[6] Nishi, K., Saito, H., Sugou, S. and Lee, J.S. (1999) A Narrow Photoluminescence Linewidth of 21 meV at 1.35 μm from Strain-Reduced InAs Quantum Dots Covered by In0.2Ga0.8As Grown on GaAs Substrates. Applied Physics Letters, 74, 1111-1113. [Google Scholar] [CrossRef] 
[7] Jia, R., Jiang, D.S., Liu, H.Y., Wei, Y.Q., Xu, B. and Wang, Z.G. (2002) Influence of Combined InAlAs and InGaAs Strain-Reducing Laser on Luminescence Properties of InAs/GaAs Quantum Dots. Journal of Crystal Growth, 234, 354-358. [Google Scholar] [CrossRef] 
[8] Hsieh, T.P., Chiu, P.C., Chyi, J.I., Yeh, N.T., Ho, W.J., Chang, W.H. and Hsu, T.M. (2005) 1.55 μm Emission from InAs Quantum Dots Grown on GaAs. Applied Physics Letters, 87, Article ID: 151903. [Google Scholar] [CrossRef] 
[9] Huffaker, D.L., Park, G., Zou, Z., Shchekin, O.B. and Deppe, D.G. (1998) 1.3 μm Room-Temperature GaAs-Based Quantum-Dot Laser. Applied Physics Letters, 73, 2564. [Google Scholar] [CrossRef] 
[10] Park, G., Shchekin, O.B., Huffaker, D.L. and Deppe, D.G. (2000) Low-Threshold Oxide-Confined 1.3-μm Quantum-Dot Laser. IEEE Photonics Technology Letters, 13, 230.
[11] Amano, T., Sugaya, T. and Komori, K. (2006) 1.3-μm InAs Quantum-Dot Laser with High Dot Density and High Uniformity. IEEE Photonics Technology Letters, 18, 619-621. [Google Scholar] [CrossRef] 
[12] Han, Q., Niu, Z., Ni, H., Zhang, S., Yang, X., Du, Y., Tong, C., Zhao, H., Xu, Y., Peng, H. and Wu, R. (2006) Chinese Optics Letters, 4, 413.
[13] Maximov, M.V., Tsasul’nikov, A.F., Volovik, B.V., Bedarev, D.A., Egorov, A.Yu., Zhukov, A.E., Kovsh, A.R., Bert, N.A., Ustinov, V.M., Kopev, P.S., Alferov, Zh.I., Ledetsovb, N.N., Bimberg, D., Soshnikove, I.P. and Werner, P. (1999) Optical and Structural Properties of InAs Quantum Dots in a GaAs Matrix for a Spectral Range Up to 1.7 μm. Applied Physics Letters, 75, 2347-2349. [Google Scholar] [CrossRef] 
[14] Mi, Z., Bhattacharya, P. and Yang, J. (2006) Growth and Characteristics of Ultralow Threshold 1.45 μm Metamorphic InAs Tunnel Injection Quantum Dot Lasers on GaAs. Applied Physics Letters, 89, Article ID: 153109. [Google Scholar] [CrossRef] 
[15] Mi, Z., Wu, C., Yang, J. and Bhattacharya, P. (2008) Molecular Beam Epitaxial Growth and Characteristics of 1.52 μm Metamorphic InAs Quantum Dot Lasers on GaAs. Journal of Vacuum Science & Technology B, 26, 1153-1156. [Google Scholar] [CrossRef] 
[16] Mizuno, H., Inoue, T., Kikuno, M., Kita, T., Wada, O., Mori, H. and Yasuda, H. (2007) Emission-Wavelength Extension of Nitrided InAs/GaAs Quantum Dots with Different Sizes. Journal of Crystal Growth, 301-302, 709-712. [Google Scholar] [CrossRef] 
[17] Kudrawiec, R., Bank, S.R., Yuen, H.B., Bee, H., Wistey, M.A., Goddard, L.L., Harris Jr., J.S., Gladysiewicz, M., Motyka, M. and Misiewicz, J. (2007) Fermi Level Shift in GaInNAsSb/GaAs Quantum Wells upon Annealing Studied by Contactless Electroreflectance. Applied Physics Letters, 90, Article ID: 131905. [Google Scholar] [CrossRef] 
[18] Xin, Y.C., Vaughn, L.G., Dawson, L.R., Stintz, A., Lin, Y., Lester, L.F. and Huffaker, D.L. (2003) InAs Quantum-Dot GaAs-Based Lasers Grown on AlGaAsSb Metamorphic Buffers. Journal of Applied Physics 94, 2133. [Google Scholar] [CrossRef] 
[19] Ripalda, J.M., Granados, D., Gonzalez, Y., Sanchez, A.M., Molina, S.I. and Garcia, J.M. (2005) Room Temperature Emission at 1.6 μm from InGaAs Quantum Dots Capped with GaAsSb. Applied Physics Letters, 87, Article ID: 202108. [Google Scholar] [CrossRef] 
[20] Ng, J.S., Liu, H.Y., Steer, M.J., Hopkinson, M. and David, J.P.R. (2006) Photoluminescence beyond 1.5 μm from InAs Quantum Dots. Microelectronics Journal, 37, 1468-1470. [Google Scholar] [CrossRef] 
[21] Liu, H.Y., Qiu, Y., Jin, C.Y., Walther, T. and Cullis, A.G. (2008) 1.55 μm InAs Quantum Dots Grown on a GaAs Substrate Using a GaAsSb Metamorphic Buffer Layer. Applied Physics Letters, 92, Article ID: 111906. [Google Scholar] [CrossRef] 
[22] Sitarek, P., Hsu, H.P., Huang, Y.S., Lin, J.M., Lin, H.H. and Tiong, K.K. (2009) Optical Studies of Type-I GaAs1−xSbx/GaAs Multiple Quantum Well Structures. Journal of Applied Physics, 105, Article ID: 123523. [Google Scholar] [CrossRef] 
[23] Ohta, M., Kanto, T. and Yamaguchi, K. (2006) Self-Formation of High-Density and High-Uniformity InAs Quantum Dots on Sb/GaAs Layers by Molecular Beam Epitaxy. Journal of Applied Physics, 45, 3427. [Google Scholar] [CrossRef] 
[24] Guimard, D., Nishioka, M., Tsukamoto, S. and Arakawa, Y. (2006) High Density InAs/GaAs Quantum Dots with Enhanced Photoluminescence Intensity Using Antimony Surfactant-Mediated Metal Organic Chemical Vapor Deposition. Applied Physics Letters, 89, Article ID: 183124. [Google Scholar] [CrossRef] 
[25] Guimard, D., Arakawa, Y., Ishida, M., Tsukamoto, S., Nishioka, M., Nakata, Y., Sudo, H. and Yamamoto, T. (2007) Ground State Lasing at 1.34 μm from InAs/GaAs Quantum Dots Grown by Antimony-Mediated Metal Organic Chemical Vapor Deposition. Applied Physics Letters, 90, Article ID: 241110. [Google Scholar] [CrossRef] 
[26] Guimard, D., Ishida, M., Hatori, N., Nakata, Y., Sudo, H., Yamamoto, T., Sugawara, M. and Arakawa, Y. (2008) CW Lasing at 1.35 μm from Ten InAs-Sb: GaAs Quantum-Dot Layers Grown by Metal-Organic Chemical Vapor Deposition. IEEE Photonics Technology Letters, 20, 827-829. [Google Scholar] [CrossRef] 
[27] Matsuura, T., Miyamoto, T., Ohta, M., Matsui, Y., Furuhata, T. and Koyama, F. (2005) PL Characteristics of InAs Quantum Dots with Sb Irradiation in Growth Interruption. Journal of Crystal Growth, 278, 51-56. [Google Scholar] [CrossRef] 
[28] Kawaguchi, K., Ekawa, M., Akiyama, T., Kuwatsuka, H. and Sugawara, M. (2006) Surfactant-Related Growth of InAs1−xSbx Quantum Structures on InP(0 0 1) by Metalorganic Vapor-Phase Epitaxy. Journal of Crystal Growth, 291, 154-159. [Google Scholar] [CrossRef] 
[29] Gong, Z., Fang, Z.D., Xu, X.H., Miao, Z.H., Niu, Z.C. and Feng, S.L. (2004) Optical Characteristics of InAs Quantum Dots Capped with Short Period GaAs/InAs Superlattices and InGaAs Combination Layers. Solid State Communication, 132, 421-424. [Google Scholar] [CrossRef] 
[30] You, M.H., Li, Z.G., Gao, X., Liu, X.D., Deng, Y., Liu, G.J., Li, L., Wei, Z.P. and Wang, X.H. (2012) Long Wavelength Strain-Engineered InAs Multi-Layer Stacks Quantum Dots Laser Diode on GaAs Substrate. Laser Physics, 22, 1673-1675. [Google Scholar] [CrossRef] 
[31] 李占国, 刘国军, 尤明慧, 李林, 李梅, 乔忠良, 邓昀, 王勇, 王晓华, 赵英杰, 李联合. 采用InGaSb柱形量子点实现高效率1.5 µm通讯波段激光器外延结构的外延生长设计及方法[P]. 中国, ZL200910066797.4. 2010-08.