MOCVD工艺腔体PM后调机率的改善方法

Improvement Method of Adjustment Rate on MOCVD Process Chamber after PM

摘要: MOCVD工艺用于生长接触窗中的TiN薄膜。MOCVD的成膜厚度和均一性因受温度和工艺气体分布影响较大，导致PM后调机率很高，影响机台的Uptime。通过对handoff的管控，实现Wafer温度偏低区域的温度提升；通过By Kits和By腔体的C0管控，实现Wafer实际成膜温度的有效控制；通过管控Shower Head 每圈孔洞直径均值的最大差值 < 30 μm，实现对工艺气体分布的有效管控；以上三种方法同时使用，MOCVD工艺腔体PM后的调机率由64%降低到32%，有效地提高了设备Uptime。

Abstract: The TiN thin films in contact windows are grown by MOCVD. The film thickness and uniformity of MOCVD are greatly influenced by temperature and process gas distribution, resulting in a high adjustment rate after PM, which affects the Uptime of the machine. Through the control of handoff, the temperature in the low temperature area of wafer can be increased; through C0 control of By Kits and By process chamber, effective control of wafer actual film forming temperature is realized; effective control of process gas distribution is realized by controlling the maximum difference of average pore diameter of each circle of Shower Head < 30 μm; when the above three methods are used at the same time, the adjustment rate of MOCVD chamber after PM is reduced from 64% to 32%, which effectively improves the Uptime of the equipment.