负性黑色光刻胶光刻工艺参数的优化研究

Research on Optimization of Photolithography Process Parameters for Negative Black Photoresist

摘要: 光刻在集成电路制造工艺中占据着非常重要的位置，其中光刻胶的使用必不可少。每种光刻胶的物理和化学特性各有差异，在不同品牌型号光刻机上的表现也会有差异。为更好地匹配不同的光刻机，达成优异的光刻性能表现，使用新款光刻胶时，前处理、软烘、曝光、显影等工艺参数需要进行相应的调整。本文介绍了光刻工艺的基本流程，光刻胶的成分、理化特性及其用途，重点关注显影方式和参数对显影不洁问题的影响，阐述了一款黑色负性光刻胶工艺参数优化的过程，经过多次试验，最终得到了最佳工艺参数：软烘：100℃、120 s；曝光：i-line、150 mj/cm²；显影：扫描显影80 s。

Abstract: Photolithography plays a crucial role in the integrated circuit manufacturing process, which requires the usage of photoresist. Each photoresist has various physical and chemical properties, and it will function differently on different brands and models of lithography machines. When employing the new photoresist, process parameters such as pretreatment, soft bake, exposure and development must be changed to better match different lithography equipment and provide good lithography performance. This paper introduces the basic photolithography process, the composition, physical and chemical properties of the photoresist, and its application, with a focus on the influence of the development method and parameters on the development of unclean problems, and expounds a black negative photoresist process parameter optimization method. After numerous tests, the best process parameters were finally obtained: Soft bake: 100˚C, 120 s; exposure: i-line, 150 mj/cm²; development: scanning and development for 80 s.