Sn掺杂Cs2AgBiCl6纳米晶的制备及其光学性能研究
Preparation and Optical Properties of Sn-Doped Cs2AgBiCl6 Nanocrystals
DOI: 10.12677/MS.2022.124035, PDF,    国家自然科学基金支持
作者: 夏 悦, 戢 威, K. P. Homewood, 高 云*：湖北大学材料科学与工程学院，湖北 武汉
关键词: 双钙钛矿纳米晶；Sn掺杂；荧光；Double Perovskite； Nanocrystals； Sn Doping； Fluorescence
摘要: 无铅Cs2AgBiCl6双钙钛矿材料作为有毒铅卤钙钛矿光伏材料的替代品，具备环境友好，稳定性高等优势而备受关注。Cs2AgBiCl6材料具备间接带隙半导体特性，由于强载流子–声子耦合相互作用形成的本征自限，增大了载流子的非辐射复合，降低了辐射复合效率，从而限制了其光电领域的进一步应用。理论计算表明，Sn掺杂可以改变Cs2AgBiCl6双钙钛矿内部结构形成直接带隙，抑制非辐射复合。本工作采用热注入法制备Sn掺杂的Cs2AgBiCl6双钙钛矿纳米晶，采用XRD，TEM，XPS等研究材料的相结构、微观形貌及价键特征，并探究了其光吸收和荧光发光特性。研究表明，Sn原子可以有效掺杂进入Cs2AgBiCl6晶格结构，并显著提高其荧光量子效率。
Abstract: As the alternatives to toxic lead-halide perovskite photovoltaic materials, the lead-free Cs2AgBiCl6 double perovskites have recently attracted much attention due to their environmental friendliness and high stability. However, Cs2AgBiCl6 material is of intrinsic self-limitation due to its strong carrier-phonon coupling as an indirect bandgap semiconductor. The non-radiative recombination of carriers greatly reduces its radiative recombination efficiency and therefore limits its application in optoelectronics. The oretical calculation has indicated that Sn doping will give rise to changes in the internal structure of the Cs2AgBiCl6 double perovskite, resulting in the formation of direct band gap and thus reducing the non-radiative recombination. In this work, Sn-doped Cs2AgBiCl6 double perovskite nanocrystals were prepared by a thermal injection method, and the crystal structure, optical properties and valence structure were investigated by means of XRD, TEM and XPS, The experimental results show that Sn atoms are effectively doped in the structure of the lead- free perovskite nanocrystals, leading to a significant improvement in the fluorescence quantum yield.
文章引用：夏悦, 戢威, K. P.Homewood, 高云. Sn掺杂Cs2AgBiCl6纳米晶的制备及其光学性能研究[J]. 材料科学, 2022, 12(4): 341-351. https://doi.org/10.12677/MS.2022.124035

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