外延铁酸铋薄膜的阻变存储性能
Resistance Storage Properties on Epitaxial Bis-muth Ferrite Thin Films
摘要: 采用磁控溅射法，以(001)取向钛酸锶SrTiO3 (STO)单晶基片为衬底，镧锶钴氧La0.5Sr0.5CoO3 (LSCO)为底电极，铁酸铋BiFeO3 (BFO)为铁电介质构架了Pt/BiFeO3/La0.5Sr0.5CoO3/SrTiO3 (Pt/BFO/LSCO/STO)异质结阻变存储器。X射线衍射证实了BFO (001)的外延结构，摇摆曲线表明随着厚度的增大BFO的结晶质量增大。研究BFO薄膜厚度对Pt/BFO/LSCO异质结阻变效应的影响，结果表明，200 nm BFO薄膜开始出现阻变效应，随着厚度的增大，阻变效应所需要的电压相应增加，高阻/低阻的比值增大。此外，300 nm厚度下，阻变效应随着外加电压增大，Pt/BFO/LSCO异质结阻变效应更加显著，且5 V工作电压下，高阻/低阻的比值达到最大。
Abstract: Using the magnetron sputtering method, the (001) oriented strontium titanate SrTiO3 (STO) single crystal substrate is used as the substrate, the lanthanum strontium cobalt oxide La0.5Sr0.5CoO3 (LSCO) is used as the bottom electrode and the bismuth ferrite BiFeO3 (BFO) is used as the ferroelectric medium, constructed Pt/BiFeO3/La0.5Sr0.5CoO3/SrTiO3 (Pt/BFO/LSCO/STO) heterostructure resistance memory. X-ray diffraction confirmed the epitaxial structure of BFO (001), and the rocking curve indicated that the crystal mass of BFO increased with increasing thickness. The effect of BFO film thickness on the Pt/BFO/LSCO heterostructure resistance effect was studied, and the results showed that the 200 nm BFO film began to exhibit a resistance effect, and with the increase of thickness, the voltage required for the resistance effect increased accordingly, and the ratio of high resistance/low resistance increased. In addition, at a thickness of 300 nm, the resistance effect increases with the applied voltage, the Pt/BFO/LSCO heterostructure resistance effect is more significant, and the high-impedance/low-impedance ratio reaches the maximum at 5 V operating voltage.
文章引用：李奕瑄, 张萌, 孙志旺, 于笑妍, 王沛洋, 周斌, 王沛洋, 魏东蕊, 王沛洋, 侯志青, 宋建民, 王云明. 外延铁酸铋薄膜的阻变存储性能[J]. 纳米技术, 2022, 12(2): 56-61. https://doi.org/10.12677/NAT.2022.122008

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