溶液法制备MAPbI3 纳米线阵列
MAPbI3 Nanowire Arrays Were Prepared by Solution Method
摘要: 近年来,钙钛矿纳米材料因其具有优异的光学和电学特性,如载流子迁移率高、光吸收系数高、可调禁带宽度等,可以应用于纳米激光器,太阳能电池,发光二极管等领域。这种新型半导体光电材料可以采用溶液法制备,并且制造成本较低,溶液法处理的钙钛矿具有直接带隙,在紫外–可见光范围内的吸收系数比硅的吸收系数大。有机–无机钙钛矿纳米线的制备主要有溶液法、气相法和旋转涂膜法,本文中我们使用了比较简单的溶液法制备有机–无机钙钛矿纳米线,并且还设置了一个12˚的倾斜坡度来生长纳米线,从而使得纳米线在重力的作用下朝一个方向生长,最后也得到了生长方向较为一致的有机–无机钙钛矿纳米线。从我们的结果中可以发现当前驱体溶液的质量分数从1%逐渐增大到10%的时候,纳米线的直径从纳米量级增加到微米量级,在405 nm、16.6 mW激光照射下,前驱体溶液质量分数分别为1%、2%、5%和10%的PL光谱的半宽高(FWHM)为38.9 nm、40.2 nm、49.0 nm和50.0 nm,表明得到的晶体质量较好。
Abstract: In recent years, perovskite nanomaterials can be used in nanometer lasers, solar cells, light-emitting diodes and other fields due to their excellent optical and electrical properties, such as high carrier mobility, high light absorption coefficient, adjustable band gap and so on. This novel semiconductor optoelectronic material can be prepared by a solution method with low manufacturing cost. Solution treated perovskite has a direct band gap and a larger absorption coefficient in the UV-visible range than that of silicon. The preparation of organic-inorganic perovskite nanowires is mainly solution method, gas phase method and spin coating method. In this article, we use the simpler solution preparation of organic-inorganic perovskite nanowires, and have set up a 12˚ inclined slope to grow nanowires, making nanowires under the action of gravity in a direction of growth, Finally, organic-inorganic perovskite nanowires with the same growth direction were obtained. It can be found from our results that when the mass fraction of precursor solution gradually increases from 1% to 10%, the diameter of nanowires increases from the nanometer level to the micron level. Under the irradiation of 405 nm and 16.6 MW laser, The half-width heights (FWHM) of PL spectra with 1%, 2%, 5% and 10% precursors are 38.9 nm, 40.2 nm, 49.0 nm and 50.0 nm, indicating that the crystals obtained are of good quality.
文章引用:黄富城, 黄兰清, 张弘, 张粤, 刘小英, 何聪颖, 何雨培, 潘福狄, 黄国现, 刘林生. 溶液法制备MAPbI3 纳米线阵列[J]. 传感器技术与应用, 2022, 10(3): 327-332. https://doi.org/10.12677/JSTA.2022.103039

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