掺锆氧化镍/硅化镍/硅微通道结构的三维超级电容器
Synthesis of Zr Doped NiO Layers on NiSi2/Si-MCP Structures for Supercapacitors
摘要: 本文制作了掺锆氧化镍/硅化镍/硅微通道板结构三维超级电容器。采用电化学刻蚀的方法制成硅微通道板(Si-MCP)，并将其作为该三维电容器结构的骨架。采用无电镀的方法在硅微通道上均匀沉积一层掺锆镍金属层，通过将样品在氧气氛围中500℃退火，在硅微通道表面得到掺锆氧化镍层。用场发射扫描电子显微镜(FESEM)和能量色散谱仪(EDX)以及X射线衍射(XRD)表征了此样品的结构和表面形貌，用循环伏安法(CV)和计时电位测试表征了电化学特性，结果表明掺Zr氧化镍/硅化镍/硅微通道结构电容性能有较大提升。
Abstract: Three-dimensional supercapacitors consisting of Zr doped NiO/NiSi2/silicon microchannel plate (MCP) stacked structures are fabricated. The silicon MCP fabricated by electrochemical etching is utilized as a substrate of 3D structure. After electroless plating of zirconium doped nickel on the surface of the Si-MCP substrate, the Zr doped NiO and NiSi2 are synthesized by annealing at 500˚C in oxygen condition. The structure and morphology of the Zr doped NiO/NiSi2/Si-MCP nanocomposite electrodes are characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDX) and X-ray diffraction (XRD). The electrochemical properties are determined by cyclic voltammetry (CV) and chronopotentiometry. The results show the improvement of capacity and good reversibility for Zr doped NiO/NiSi2/Si-MCP.
文章引用：顾林玲, 刘涛, 赖佳, 李劢, 王斐, 徐少辉, 王连卫. 掺锆氧化镍/硅化镍/硅微通道结构的三维超级电容器[J]. 材料科学, 2012, 2(2): 77-82. http://dx.doi.org/10.12677/ms.2012.22014

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