穴位埋线调控氧化应激标志物水平改善血管性痴呆大鼠学习记忆功能
Catgut Implantation at Acupoint Improving the Learning and Memory Function of Vascular Dementia Rats by Regulating the Level of Oxidative Stress Markers
DOI: 10.12677/ACM.2023.131126, PDF,    国家自然科学基金支持
作者: 孙秋颖*, 布 雨, 李允争:贵州中医药大学基础医学院,贵州 贵阳;唐中生#:贵州中医药大学解剖学教研室,贵州 贵阳
关键词: 血管性痴呆穴位埋线氧化应激学习记忆Vascular Dementia Catgut Implantation at Acupoint Oxidative Stress Learning and Memory
摘要: 目的:观察穴位埋线(CIAA)治疗对血管性痴呆(VaD)大鼠氧化应激水平的影响。方法:VaD大鼠模型的建立采用改良的Pulsinelli’s四血管阻断法(4-VO),使用随机数字法将造模成功的大鼠分为3组:模型组、穴位埋线组、尼莫地平组,另设假手术组作为对照组。治疗20 d后,Morris水迷宫检测各组大鼠的学习和记忆功能,苏木精–伊红(HE)染色观察海马CA1区神经细胞病理变化,酶联免疫吸附法(ELISA)检测血清中NOX2含量,蛋白质印迹法(WB)检测海马中nNOS的蛋白表达,比色法检测脑海马中MDA、SOD、NO的表达情况。结果:与假手术组比较,模型组大鼠平均逃避潜伏期延长、跨越平台次数减少,统计学意义显著(P < 0.01),与模型组比较,穴位埋线组平均逃避潜伏期缩短、跨越平台次数增加,统计学意义显著(P < 0.05);与模型组比较,穴位埋线组血清中NOX2含量降低,脑海马中nNOS蛋白表达水平显著降低、SOD活力升高、MDA含量降低(均P < 0.05),NO含量显著降低(P < 0.01),差异均有统计学意义。结论:穴位埋线法可能通过上调脑海马中SOD活性,降低MDA含量,提高NO生物利用率,从而降低VaD大鼠脑组织氧化应激水平,延缓对神经细胞的损伤,改善VaD大鼠学习记忆功能。
Abstract: Objective: To investigate the effect of catgut implantation at acupoint on the level of oxidative stress in Vascular Dementia Rats. Method: VaD rat model was established by modified Pulsinelli’s four vessel occlusion. They were randomly divided into 3 groups: Model group, Catgut implantation at acupoint group, Nimodipine group, and set up another sham operation group as a control group. After 20 days of treatment, Morris water maze was used to detect the learning and memory function of the rats in each group; HE staining was used to observe the pathological changes of neurons in the hippocampal CA1 area; ELISA was used to detect the content of NOX2 in the serum; Western blot-ting was used to detect the protein expression of nNOS in the hippocampus; colorimetric method was used to detect the expression of MDA, SOD and NO in the hippocampus. Result: Compared with the sham operation group, the average escape latency period of the model rats was extended, and the number of times exceeded the original platform decreased, which was statistically significant (P < 0.01). Compared with the model group, the average escape latency period of the burial line group was shortened, and the number of times exceeding the original platform increased, which was sta-tistically significant (P < 0.05). Compared with the model group, the NOX2 content in serum de-creased, the expression level of nNOS protein in the cerebral hippocampus decreased significantly, the SOD vitality increased, and the MDA content decreased in the catgut implantation at acupoint group. The differences were statistically significant (all P < 0.05), the content of NO was significantly reduced (P < 0.01). Conclusion: The method of catgut implantation at acupoint may enhance SOD activity, reduce MDA content and improve NO bioavailability, so as to reduce the level of oxidative stress in brain tissue of VaD rats, reduce nerve cell damage and apoptosis, and improve learning and memory function of VaD rats.
文章引用:孙秋颖, 布雨, 唐中生, 李允争. 穴位埋线调控氧化应激标志物水平改善血管性痴呆大鼠学习记忆功能[J]. 临床医学进展, 2023, 13(1): 871-879. https://doi.org/10.12677/ACM.2023.131126

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