基于ABAQUS的划片损伤过程研究
Study on Scratch Damage Process Based on ABAQUS
摘要: 砷化镓解理加工是通过解理划片产生初始损伤,然后经过解理裂片获得解理面,因此不同的解理划片工艺参数对后续的解理裂片起到至关重要的作用。本文基于ABAQUS开展对砷化镓划片加工的有限元分析,分析划片损伤过程,以及不同工艺参数下划片过程中切削力的变化。结果表明:入刀时因未得到缓冲导致入刀口的损伤情况较大,划片深度增加一倍,划片力大小增幅达到100%左右,而划片速度增加一倍对划片力的大小几乎不影响,推断出划片载荷对划片损伤作用较大;从仿真结果来看在3 um、60 mm/s工艺参数下划片效果最佳。
Abstract:
GaAs cleavage processing produces initial damage through cleavage slicing, and then obtains cleavage surface through cleavage slicing. Therefore, different cleavage slicing process parameters play a crucial role in subsequent cleavage slicing. Based on ABAQUS, the finite element analysis of gallium arsenide scribing is carried out to analyze the scribing damage process and the change of cutting force in the scribing process under different process parameters. The results show that the damage of the knife edge is relatively large due to the lack of buffer when entering the knife, the scoring depth is doubled, and the scoring force is increased by about 100%, while the doubling of the scoring speed has little effect on the scoring force. It is concluded that the scoring load plays a greater role in the scoring damage; From the simulation results, the scribing effect is the best under the process parameters of 3 um and 60 mm/s.
参考文献
|
[1]
|
Wasmer, K., Ballif, C., Pouvreau, C., et al. (2008) Dicing of Gallium-Arsenide High Performance Laser Diodes for Industrial Applications: Part I. Scratching Operation. Journal of Materials Processing Technology, 198, 114-121. [Google Scholar] [CrossRef]
|
|
[2]
|
Wasmer, K., Ballif, C., Pouvreau, C., et al. (2008) Dicing of Gal-lium-Arsenide High Performance Laser Diodes for Industrial Applications: Part II. Cleavage Operation. Journal of Materials Processing Technology, 198, 105-113. [Google Scholar] [CrossRef]
|
|
[3]
|
王瑾. 硅衬底GaN基微盘激光器的设计与制备研究[D]: [硕士学位论文]. 北京: 北京科技大学, 2020.
|
|
[4]
|
马浩骞, 杨东, 程东化, 等. 基于Abaqus的钛合金Ti6Al4V切削仿真与工艺优化[J]. 制造业自动化, 2020, 42(11): 23-27+50.
|
|
[5]
|
葛梦然. 单晶硅的纳米刻划与切片加工性能研究[D]: [博士学位论文]. 济南: 山东大学, 2019.
|
|
[6]
|
耿瑞文, 杨晓京, 谢启明, 等. 基于划刻实验的单晶锗材料去除机理研究[J]. 无机材料学报, 2019, 34(8): 867-872.
|
|
[7]
|
耿瑞文, 杨晓京, 谢启明, 等. 基于纳米划刻实验的单晶锗切削机理[J]. 稀有金属材料与工程, 2019, 48(8): 2544-2549.
|
|
[8]
|
耿瑞文, 杨晓京, 谢启明, 等. 基于纳米划刻实验的单晶锗表面变形机制研究[J]. 稀有金属, 2020, 44(8): 850-859.
|