二硫化锡薄膜的生长及掺杂研究
Growth and Doping of Tin Disulfide Thin Films
DOI: 10.12677/MS.2023.136054, PDF,   
作者: 许书逸, 林高翔, 周颖慧*：厦门大学物理系，福建 厦门
关键词: 二硫化锡；气相外延；掺杂； Tin Disulfide； Vapor Phase Epitaxy； Doping
摘要: 二硫化锡是近年来备受关注的二维半导体材料之一，因其优异的电学和光电性能以及元素储备丰富且对环境友好等优点，在电子、光电以及能源转换等领域展现出极大的应用潜力。目前，高质量薄层二硫化锡的可控制备仍是研究中备受关注的重要课题。本文采用气相外延方法探索二硫化锡薄膜的外延生长和掺杂调控，结合多种表征测试技术，研究其生长过程和结构特性，实现了材料的逐层生长。进一步地在生长过程中引入铟掺杂，由于晶格有序度的降低，二硫化锡的拉曼特征峰展宽且强度减弱，X射线光电子能谱分析发现，铟的掺入使得体系费米能级下移，实现了p型掺杂。研究结果为二硫化锡的可控生长以及掺杂提供了参考。
Abstract: Tin disulfide (SnS2) is one of the widely con-cerned two-dimensional semiconductor materials in recent years, which exhibits excellent electri-cal and optoelectronic properties, as well as advantages such as abundant elemental reserves and environmental friendliness, and therefore shows great potential for applications in electronics, op-toelectronics, and energy conversion. The controllable fabrication of few-layer SnS2 with high quali-ty remains an important research topic so far. In this study, the growth and doping of SnS2 thin films have been performed by vapor phase epitaxy. Combining various characterization techniques, the growth mode and structural properties of SnS2 have been investigated. Furthermore, indium (In) doping has been introduced during the growth process, which led to a broadening and weakening of the Raman peaks of SnS2 due to the reduced lattice order. X-ray photoelectron spectroscopy studies reveal that the introduction of In results in the shift down of the Fermi level and produces p-type doping in SnS2. The research findings provide valuable insights for the controllable growth and structural properties of the intrinsic and doped tin disulfide.
文章引用：许书逸, 林高翔, 周颖慧. 二硫化锡薄膜的生长及掺杂研究[J]. 材料科学, 2023, 13(6): 511-517. https://doi.org/10.12677/MS.2023.136054

参考文献

[1] Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O.V. and Kis, A. (2017) 2D Transition Metal Dichalcogenides. Nature Reviews Materials, 2, Article No. 17033. [Google Scholar] [CrossRef] 
[2] Han, G.G.D., Tu, K.H., Niroui, F., Xu, W., Zhou, S., Wang, X., Bulović, V., Ross, C.A., Warner, J.H. and Grossman, J.C. (2017) Photo-luminescent Arrays of Nanopatterned Monolayer MoS2. Advanced Functional Materials, 27, Article ID: 1703688. [Google Scholar] [CrossRef] 
[3] Cong, C.X., Shang, J.Z., Wang, Y.L. and Yu, T. (2018) Optical Properties of 2D Semiconductor WS2. Advanced Optical Materials, 6, Article ID: 1700767. [Google Scholar] [CrossRef] 
[4] Cheng, Q.L., Pang, J.B., Sun, D.H., Wang, J.G., Zhang, S., Liu, F., Chen, Y.K., Yang, R.Q., Liang, N., Lu, X.H., Ji, Y.C., Wang, J., Zhang, C.C., Sang, Y.H., Liu, H. and Zhou, W.J. (2020) WSe2 2D p-Type Semiconductor-Based Electronic Devices for Information Technology: Design, Preparation, and Applications. InfoMat, 2, 656-697. [Google Scholar] [CrossRef] 
[5] Li, H., Huang, J.K., Shi, Y. and Li, L.J. (2019) Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors. Advanced Materials Interfaces, 6, Article ID: 1900220. [Google Scholar] [CrossRef] 
[6] Hu, Z., Ding, Y., Hu, X., Zhou, W., Yu, X. and Zhang, S. (2019) Recent Progress in 2D Group IV-VI Monochalcogenides: Synthesis, Properties and Applications. Nanotechnol-ogy, 30, Article ID: 252001. [Google Scholar] [CrossRef] [PubMed]
[7] Voznyi, A., Kosyak, V., Opanasyuk, A., Tirkusova, N., Grase, L., Medvids, A. and Mezinskis, G. (2016) Structural and Electrical Properties of SnS2 Thin Films. Materials Chemistry and Physics, 173, 52-61. [Google Scholar] [CrossRef] 
[8] Zhang, H.D., Balaji, Y., Mehta, A.N., Heyns, M., Cay-max, M., Radu, I., Vandervorst, W. and Delabie, A. (2018) Formation Mechanism of 2D SnS2 and SnS by Chemical Vapor Deposition Using SnCl4 and H2S. Journal of Materials Chemistry C, 6, 6172-6178. [Google Scholar] [CrossRef] 
[9] Qin, Y., Chen, S. and Bai, Y. (2022) Adsorption and Sensing Perfor-mance toward Methanol Vapor on SnS/SnS2 In-Plane Heterostructures. ACS Applied Electronic Materials, 4, 158-167. [Google Scholar] [CrossRef] 
[10] Gonzalez, J.M. and Oleynik, I.I. (2016) Layer-Dependent Properties of SnS2 and SnSe2 Two-Dimensional Materials. Physical Review B, 94, Article ID: 125443.
[11] Huang, Y., Sutter, E., Sadowski, J.T., Cotlet, M., Monti, O.L.A., Racke, D.A., Neupane, M.R., Wickramaratne, D., Lake, R.K., Parkinson, B.A. and Sutter, P. (2014) Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Prop-erties and Device Characteristics. ACS Nano, 8, 10743-10755. [Google Scholar] [CrossRef] [PubMed]
[12] Jia, X.S., Tang, C.C., Pan, R.H., Long, Y.Z., Gu, C.Z. and Li, J.J. (2018) Thickness-Dependently Enhanced Photodetection Performance of Vertically Grown SnS2 Nanoflakes with Large Size and High Production. ACS Applied Materials & Interfaces, 10, 18073-18081. [Google Scholar] [CrossRef] [PubMed]
[13] Chen, Y. and Zhang, M. (2021) Large-Area Growth of SnS2 Nanosheets by Chemical Vapor Deposition for High Performance Photodetectors. RSC Advances, 11, 29960-29964. [Google Scholar] [CrossRef] 
[14] Tian, H., Meng, X., Yang, J., Fan, C., Yuan, S., An, X., Sun, C., Zhang, Y., Wang, M., Zheng, H., Wei, Z. and Li, E. (2020) Visible Phototransistors Based on Vertical Nanolayered Het-erostructures of SnS/SnS2 p-n and SnSe2/SnS2 n-n Nanoflakes. ACS Applied Nano Materials, 3, 6847-6854. [Google Scholar] [CrossRef] 
[15] Aji, A.S., Izumoto, M., Suenaga, K., Yamamoto, K., Nakashima, H. and Ago, H. (2018) Two-Step Synthesis and Characterization of Vertically Stacked SnS-WS2 and SnS-MoS2 p-n Het-erojunctions. Physical Chemistry Chemical Physics, 20, 889-897. [Google Scholar] [CrossRef] 
[16] Ahn, J.H., Lee, M.J., Heo, H., Sung, J.H., Kim, K., Hwang, H. and Jo, M.H. (2015) Deterministic Two-Dimensional Poly-morphism Growth of Hexagonal n-Type SnS2 and Orthorhombic p-Type SnS Crystals. Nano Letters, 15, 3703-3708. [Google Scholar] [CrossRef] [PubMed]
[17] Suh, J., Park, T.E., Lin, D.Y., Fu, D., Park, J., Jung, H.J., Chen, Y., Ko, C., Jang, C., Sun, Y., Sinclair, R., Chang, J., Tongay, S. and Wu, J. (2014) Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution. Nano Letters, 14, 6976-6982. [Google Scholar] [CrossRef] [PubMed]
[18] Li, B., Huang, L., Zhong, M., Huo, N., Li, Y., Yang, S., Fan, C., Yang, J., Hu, W., Wei, Z. and Li, J. (2015) Synthesis and Transport Properties of Large-Scale Alloy Co0.16Mo0.84S2 Bilayer Nanosheets. ACS Nano, 9, 1257-1262. [Google Scholar] [CrossRef] [PubMed]
[19] Liu, J., Zhong, M., Liu, X., Sun, G., Chen, P., Zhang, Z., Li, J., Ma, H., Zhao, B., Wu, R., Dang, W., Yang, X., Dai, C., Tang, X., Fan, C., Chen, Z., Miao, L., Liu, X., Liu, Y., Li, B. and Duan, X. (2018) Two-Dimensional Plumbum-Doped Tin Diselenide Monolayer Transistor with High On/Off Ratio. Nano-technology, 29, Article ID: 474002. [Google Scholar] [CrossRef] [PubMed]
[20] Feng, Q., Mao, N., Wu, J., Xu, H., Wang, C., Zhang, J. and Xie, L. (2015) Growth of MoS2(1–x)Se2x (x = 0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition. ACS Nano, 9, 7450-7455. [Google Scholar] [CrossRef] [PubMed]
[21] Li, Z., Shu, W., Li, Q., Xu, W., Zhang, Z., Li, J., Wang, Y., Liu, Y., Yang, J., Chen, K., Duan, X., Wei, Z. and Li, B. (2021) Nondegenerate P-Type In-Doped SnS2 Monolayer Transistor. Advanced Electronic Materials, 7, Article ID: 2001168. [Google Scholar] [CrossRef] 
[22] Yuan, S., Fan, C., Tian, H., Zhang, Y., Zhang, Z., Zhong, M., Liu, H., Wang, M. and Li, E. (2020) Enhanced Photoresponse of In-dium-Doped Tin Disulfide Nanosheets. ACS Applied Materials & Interfaces, 12, 2607-2614. [Google Scholar] [CrossRef] [PubMed]
[23] Li, B., Xing, T., Zhong, M. Huang, L., Lei, N., Zhang, J., Li, J. and Wei, Z. (2017) A Two-Dimensional Fe-doped SnS2 Magnetic Semiconductor. Nature Communications, 8, Article No. 1958. [Google Scholar] [CrossRef] [PubMed]
[24] Yu, D., Liu, Y., Sun, L., Wu, P. and Zhou, W. (2016) Density Functional Study on the Hole Doping of Single-Layer SnS2 with Metal Element X (X = Li, Mg and Al). Physi-cal Chemistry Chemical Physics, 18, 318-324. [Google Scholar] [CrossRef] 
[25] He, H.B., Zhao, J.W., Huang, P.R., Sheng, R.F., Yu, Q.Z., He, Y.Y. and Cheng, N. (2022) Performance Improvement in Monolayered SnS2 Double-Gate Field-Effect Transistors via Point Defect Engineering. Physical Chemistry Chemical Physics, 24, 21094-21104. [Google Scholar] [CrossRef] 
[26] Wang, C.R., Tang, K.B., Yang, Q. and Qian, Y.T. (2002) Raman Scat-tering, Far Infrared Spectrum and Photoluminescence of SnS2 Nanocrystallites. Chemical Physics Letters, 357, 371-375. [Google Scholar] [CrossRef] 
[27] Zhao, Y., Yu, D., Lu, J., Tao, L., Chen, Z., Yang, Y., Wei, A., Tao, L., Liu, J., Zheng, Z., Hao, M. and Xu, J.B. (2019) Thickness-Dependent Optical Properties and In-Plane Ani-sotropic Raman Response of the 2D β-In2S3. Advanced Optical Materials, 7, Article ID: 1901085. [Google Scholar] [CrossRef] 
[28] Zhang, Q., Ying, H., Li, X., Xiang, R., Zheng, Y., Wang, H., Su, J., Xu, M., Zheng, X., Maruyama, S. and Zhang, X. (2021) Controlled Doping Engineering in 2D MoS2 Crystals toward Performance Augmentation of Optoelectronic Devices. ACS Applied Materials & Interfaces, 13, 31861-31869. [Google Scholar] [CrossRef] [PubMed]

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