Ru掺杂ZnO纳米棒阵列薄膜氢气传感器性能研究
Research on Performance of H2 Sensor Based on Ru Doped ZnO Nanorod Ar Thin-Film
DOI: 10.12677/MS.2023.1310098, PDF,   
作者: 戢 威, 黎 勋, 谭 添, 王实锋, 田战友, 高 云*：湖北大学材料科学与工程学院，湖北 武汉
关键词: Ru掺杂ZnO；氧空位；氢气传感器；纳米棒阵列； Ru Doped ZnO； Oxygen Vacancy； Hydrogen Sensor； Nanorod Array
摘要: 金属氧化物半导体氢气传感器具备可集成、高响应、长寿命等优势，在氢能的安全制备、存储、运输和使用过程中对氢气泄露预警起着重要的作用。本文采用一步水热法制备了取向生长的Ru掺杂ZnO纳米棒阵列薄膜，在非加热条件下获得了高响应度、选择性高的氢气气敏传感性能。通过XRD、SEM、XPS、Raman和EPR等测试方法表征样品的微结构、化学价态，探索传感性能提升机理。高取向的纳米棒阵列降低了电子输运过程的能垒，提供了电子快速输运通道，有利于实现非加热式气敏响应。Ru掺杂在降低纳米棒直径的同时提升纳米棒的密度，增加表面氧空位浓度及表面氧吸附，Ru同时还参与气敏响应氧化还原反应过程，进一步提升了氢气气敏响应性能。
Abstract: Metal oxide semiconductor hydrogen sensor has the advantages of ease of integration, high sensitivity and long life, playing an important role in fast response to hydrogen leakage in the preparation, storage and transportation of hydrogen energy. In this paper, Rudoped ZnO nanorod array thin-films were prepared by one-step hydrothermal method. High response and unique selectivity to hydrogen were obtained under heating free condition. The microstructure, chemical states were characterized by XRD, SEM, XPS, Raman and EPR to understand the sensing mechanism. The highly oriented nanorod arrays reduce the energy barrier of the electron transport and provide the fast electron transport channel, which facilitate the heat free hydrogen sensing. Ru doping into ZnO reduces the diameter and increases the density of ZnO nanorods, increases the surface oxygen vacancy concentration, and improves the density of surface oxygen adsorption. Ru participating in the redox reaction under sensing process further improves the hydrogen sensing performance.
文章引用：戢威, 黎勋, 谭添, 王实锋, 田战友, 高云. Ru掺杂ZnO纳米棒阵列薄膜氢气传感器性能研究[J]. 材料科学, 2023, 13(10): 894-903. https://doi.org/10.12677/MS.2023.1310098

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