KF界面修饰实现高性能的全无机CsPbI2Br钙钛矿太阳能电池
High-Performance All-Inorganic CsPbI2Br Perovskite Solar Cells via KF Interface Modification
DOI: 10.12677/JAPC.2023.124033, PDF,    国家自然科学基金支持
作者: 王 志, 陈 穗, 曹锦奕, 周依帆, 胡延强*：南通大学化学化工学院，江苏 南通
关键词: 钙钛矿太阳能电池；CsPbI2Br；SnO2电子传输层；KF；界面钝化；Perovskite Solar Cells； CsPbI2Br； SnO2 Electron Transport Layer； KF； Interface Passivation
摘要: 基于SnO2电子传输层的全无机CsPbI2Br钙钛矿太阳能电池由于其简单的器件结构、廉价的制备工艺和优异的热稳定性而被认为是极具潜力的新一代光伏器件。然而，SnO2电子传输层表面存在的大量氧空位缺陷严重损害了CsPbI2Br器件的光电转换效率和长期稳定性。本文通过在SnO2/CsPbI2Br钙钛矿埋底界面处引入KF修饰层，成功实现了高性能的全无机CsPbI2Br电池。研究结果表明，KF界面修饰不仅有利于钝化SnO2薄膜表面的氧空位缺陷，改善界面载流子传输性能，而且还能显著改善上层CsPbI2Br的成膜质量和结构稳定性。最终，基于KF界面修饰CsPbI2Br器件的效率由初始的12.75%提升到了16.10%，同时表现出了优异的储存稳定性和热稳定性。
Abstract: All-inorganic CsPbI2Br perovskite solar cells (PSCs) based on SnO2 electron transport layers (ETLs) are considered a promising new generation of photovoltaic devices due to their simple device structure, inexpensive preparation process, and excellent thermal stability. However, the large number of oxygen vacancy defects on the surface of the SnO2 ETL seriously damages the power conversion efficiency (PCE) and long-term stability of CsPbI2Br-based devices. In this paper, a high-performance all-inorganic CsPbI2Br PSC was successfully realized by introducing a KF modification layer at the buried interface of SnO2/CsPbI2Br. The results show that the KF interfacial modification not only facilitates the passivation of the oxygen vacancy defects on the surface of SnO2 film and improves the interfacial carrier transport performance, but also significantly improves the film-forming quality and structural stability of the upper CsPbI2Br film. Ultimately, the efficiency of CsPbI2Br PSCs based on the KF-modified SnO2 ETL was enhanced from the initial 12.75% to 16.10%, along with excellent storage stability and thermal stability.
文章引用：王志, 陈穗, 曹锦奕, 周依帆, 胡延强. KF界面修饰实现高性能的全无机CsPbI2Br钙钛矿太阳能电池[J]. 物理化学进展, 2023, 12(4): 332-340. https://doi.org/10.12677/JAPC.2023.124033

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