硒化铟场效应晶体管的制备及其气敏性能研究
Preparation and Gas Sensitivity of Indium Selenide Field Effect Transistor
DOI: 10.12677/APP.2024.141004, PDF,   
作者: 曹佳鑫, 孙鉴波*：哈尔滨师范大学物理与电子工程学院光电带隙材料教育部重点实验室，黑龙江 哈尔滨
关键词: 化学气象沉积；硒化铟；场效应晶体管；二氧化氮；Chemical Meteorological Deposition； Indium Selenide； FET； NO2
摘要: 通过化学气象沉积(CVD)的方法合成了块状硒化铟(InSe)晶体，后对制得的块状InSe进行了系列表征，并通过机械剥离的方法得到了二维(2D) InSe纳米片。同时构建了场效应晶体管(FET)，考察了InSe纳米片的电学性能，并测试了器件对二氧化氮(NO2)的气敏性能。实验表明，所搭建的InSe场效应晶体管具有良好的电学性能，并在室温下对NO2具有良好的响应。
Abstract: Bulk indium selenide (InSe) crystals were synthesized by chemical meteorological deposition (CVD). The bulk InSe crystals were characterized and two-dimensional (2D) InSenanosheets were obtained by mechanical peeling-off method. Field effect transistors (FETs) were also constructed to investigate the electrical properties of InSenanosheets, and the gas sensitivity of the devices to nitrogen dioxide (NO2) was tested. The experiments show that the constructed InSe FET has good electrical performance and good response to NO2 at room temperature.
文章引用：曹佳鑫, 孙鉴波. 硒化铟场效应晶体管的制备及其气敏性能研究[J]. 应用物理, 2024, 14(1): 25-30. https://doi.org/10.12677/APP.2024.141004

参考文献

[1] Wang, Y., Wang, Y., Kuai, Y., et al. (2023) “Visualization” Gas—Gas Sensors Based on High Performance Novel MXenes Materials. Small, 20, e2305250. [Google Scholar] [CrossRef] [PubMed]
[2] Kumar, R., Liu, X., Zhang, J., et al. (2020) Room-Temperature Gas Sensors under Photoactivation: From Metal Oxides to 2D Materials. Nano-Micro Letters, 12, 1-37. [Google Scholar] [CrossRef] [PubMed]
[3] Sun, Y. and Zhang, Y. (2023) Wafer-Scale Floating-Gate Field Effect Transistor Sensor Built on Carbon Nanotubes Film for Ppb-Level NO2 De-tection. Chemical Engineering Journal, 473, Article ID: 145480. [Google Scholar] [CrossRef] 
[4] Aftab, S., Abbas, A., Iqbal, M.Z., et al. (2023) Recent Ad-vances in Nanomaterials Based Biosensors. TrAC Trends in Analytical Chemistry, 167, Article ID: 117223. [Google Scholar] [CrossRef] 
[5] Chen, J., Pu, H., Hersam, M.C., et al. (2022) Molecular En-gineering of 2D Nanomaterial Field-Effect Transistor Sensors: Fundamentals and Translation across the Innovation Spectrum. Advanced Materials, 34, e2106975. [Google Scholar] [CrossRef] [PubMed]
[6] Jiang, J., Xu, L., Qiu, C., et al. (2023) Ballistic Two-Dimensional in Setransistors. Nature, 616, 470-475. [Google Scholar] [CrossRef] [PubMed]
[7] Zheng, W., Liu, X., Xie, J., et al. (2021) Emerging van der Waals Junctions Based on TMDs Materials for Advanced Gas Sensors. Coordination Chemistry Reviews, 447, Ar-ticle ID: 214151. [Google Scholar] [CrossRef] 
[8] Zhang, L., Li, Z., Yang, J., et al. (2022) A Fully Integrated Flexible Tunable Chemical Sensor Based on Gold-Modified Indium Selenide Nanosheets. ACS Sensors, 7, 1183-1193. [Google Scholar] [CrossRef] [PubMed]

为你推荐