基于CAE仿真计算的堆栈式PZT材料本构特性的研究
Study of the Constitutive Properties of Stacked PZT Materials Based on CAE Simulation Calculations
摘要: 压电陶瓷作为传感器敏感元件,其性能的好坏决定传感器性能好坏。因此本文利用ABAQUS有限元软件对单片压电陶瓷进行压电分析,研究了单片压电陶瓷纵向压电应变常数d33的具体值与应力应变以及位移之间的关系,此外还研究了固定载荷下的压电陶瓷圆片的半径、厚度对输出电压的影响并比较串联和并联两种连接方式之间的差异,结果表明通过仿真得到的应力预测d33的具体值具有参考意义。单片压电陶瓷的输出电压随厚度的增加的增大,随半径的增加而减小。通过对比堆栈式压电陶瓷的串联和并联的输出电压和电荷量,以及应用场景,确定堆栈式压电陶瓷堆为并联连接。
Abstract: As a sensitive component of sensors, the performance of piezoelectric ceramics determines the quality of sensor performance. Therefore, this article uses ABAQUS finite element software to con-duct piezoelectric analysis on a monolithic piezoelectric ceramic, studying the specific value of the longitudinal piezoelectric strain constant d33 of the monolithic piezoelectric ceramic and its rela-tionship with stress-strain and displacement. In addition, the influence of the radius and thickness of the piezoelectric ceramic disc under fixed load on the output voltage was studied, and the differ-ences between the series and parallel connection methods were compared. The results indicate that the specific value of stress prediction d33 obtained through simulation has reference significance. The output voltage of a monolithic piezoelectric ceramic increases with increasing thickness and decreases with increasing radius. By comparing the output voltage and charge of stacked piezoe-lectric ceramics in series and parallel, as well as their application scenarios, it is determined that stacked piezoelectric ceramic stacks are connected in parallel.
文章引用:陈捷基, 陆俊, 倪骁骅. 基于CAE仿真计算的堆栈式PZT材料本构特性的研究[J]. 建模与仿真, 2024, 13(1): 965-975. https://doi.org/10.12677/MOS.2024.131093

参考文献

[1] Zhu, X. (2010) Piezoelectric Ceramic Materials: Processing, Properties, Characterization, and Applications. In: Nelson, W.G., Ed., Piezoelectric Materials: Structure, Properties and Applications, Nova Science Publishers, New York, 1-36.
[2] Habib, M., Lantgios, I. and Hornbostel, K. (2022) A Review of Ceramic, Polymer and Composite Piezoelectric Materials. Journal of Physics D: Applied Physics, 55, Article 423002. [Google Scholar] [CrossRef
[3] 吴家刚. 电子陶瓷材料与器件[M]. 北京: 化学工业出版社, 2022.
[4] 包秀兰, 陈燕, 吉红伟, 等. 锆钛酸铅压电陶瓷的制备工艺研究[J]. 陶瓷学报, 2019, 40(2): 153-158.
[5] Barzegar, A., Damjanovic, D. and Setter, N. (2005) Analytical Modeling of the Apparent d/sub 33/ Piezoelectric Coefficient Determined by the Direct Quasistatic Method for Different Boundary Conditions. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 52, 1897-1903. [Google Scholar] [CrossRef
[6] Stoeckel, C., Kaufmann, C., Schulze, R., et al. (2013) Precise Deter-mination of Piezoelectric Longitudinal Charge Coefficients for Piezoelectric Thin Films Assisted by Finite Element Modeling. 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy (ISAF/PFM), Prague, 21-25 July 2013, 194-196. [Google Scholar] [CrossRef
[7] Zhang, M., Yang, J., Si, C., et al. (2015) Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications. Micromachines, 6, 1236-1248. [Google Scholar] [CrossRef
[8] Goldfarb, M. and Celanovic, N. (1997) Modeling Piezoelectric Stack Actuators for Control of Micromanipulation. IEEE Control Systems Magazine, 17, 69-79. [Google Scholar] [CrossRef
[9] 徐红星, 骆英, 袁新华. E-S法测量压电元件压电应变常数d33的研究[J]. 江苏理工大学学报(自然科学版), 2001, 22(4): 12-14.
[10] 唐文彦, 张晓琳. 传感器[M]. 第6版. 北京: 机械工业出版社, 2021.
[11] 李东晶. 传感器技术及应用[M]. 北京: 北京理工大学出版社, 2020.