|
[1]
|
Kuwahara, M., Mihalcea, C., Atoda, N., et al. (2002) Thermal Lithography for 0.1 μm Pattern Fabrication. Microelectronic Engineering, 61-62, 415-421. [Google Scholar] [CrossRef]
|
|
[2]
|
李豪, 耿永友, 吴谊群. 无机激光热刻蚀材料的研究进展 [J]. 激光与光电子学进展, 2011, 48(1): 19-25.
|
|
[3]
|
Wang, S., Zhou, Z., Li, B., et al. (2021) Progresses on New Generation Laser Direct Writing Technique. Materials Today Nano, 16, Article ID: 100142. [Google Scholar] [CrossRef]
|
|
[4]
|
Usami, Y., Watanabe, T., Kanazawa, Y., et al. (2009) 405 nm Laser Thermal Lithography of 40 nm Pattern Using Super Resolution Organic Resist Material. Applied Physics Express, 2, Article ID: 126502. [Google Scholar] [CrossRef]
|
|
[5]
|
Chen, Y.C., Rettner, C.T., Raoux, S., et al. (2006) Ultra-Thin Phase-Change Bridge Memory Device Using GeSb. Proceedings of the IEEE International Electron Devices Meeting, San Francisco, 11-13 December 2006, 1-4. [Google Scholar] [CrossRef]
|
|
[6]
|
Liu, C.C., Cao, X.R., Wang, J., et al. (2018) Investigation on the Optical Phase Change Properties of Intrinsic GeSb and Ti-doped GeSb. Optical Materials Express, 8, 936-947. [Google Scholar] [CrossRef]
|
|
[7]
|
Gu, Y.F., Zhang, T., Song, Z.T., et al. (2010) Characterization of the Properties for Phase-Change Material GeSb. Applied Physics A, 99, 205-209. [Google Scholar] [CrossRef]
|
|
[8]
|
Mihara, T., Kojima, R., Tsuchino, A., et al. (2014) Crystallization Properties of Ge2Bi2Te5 and Ge10Sb90 Amorphous Nanoparticles Subjected to Pulsed Laser Irradiation. Applied Physics Express, 7, Article ID: 055001. [Google Scholar] [CrossRef]
|
|
[9]
|
Chong, T.C., Shi, L.P., Zhao, R., et al. (2006) Phase Change Random Access Memory Cell with Superlattice-Like Structure. Applied Physics Letters, 88, Article ID: 122114. [Google Scholar] [CrossRef]
|
|
[10]
|
Fantini, P. (2020) Phase Change Memory Applications: The History, the Present and the Future. Journal of Physics D-Applied Physics, 53, Article ID: 283002. [Google Scholar] [CrossRef]
|
|
[11]
|
Zhang, T., Song, Z.T., Liu, B., et al. (2008) Investigation of Environmental Friendly Te-Free SiSb Material for Applications of Phase-Change Memory. Semiconductor Science and Technology, 23, Article ID: 055010. [Google Scholar] [CrossRef]
|
|
[12]
|
Guo, C.F., Cao, S.H., Jiang, P., et al. (2009) Grayscale Photomask Fabricated by Laser Direct Writing in Metallic Nano-Films. Optics Express, 17, 19981-19987. [Google Scholar] [CrossRef]
|
|
[13]
|
Wang, R., Wei, J.S., Fan, Y.T. (2014) Chalcogenide Phase-Change Thin Films Used as Grayscale Photolithography Materials. Optics Express, 22, 4973-4984. [Google Scholar] [CrossRef]
|
|
[14]
|
Wei, T., Wei, J.S., Zhang, K., et al. (2017) Grayscale Image Recording on Ge2Sb2Te5 Thin Films through Laser-Induced Structural Evolution. Scientific Reports, 7, Article ID: 42712. [Google Scholar] [CrossRef] [PubMed]
|
|
[15]
|
Limb, J.O. (1969) Design of Dither Waveforms for Quantized Visual Signals. The Bell System Technical Journal, 48, 2555-2582. [Google Scholar] [CrossRef]
|