二维硒化锡的厚度调控和结构研究
Thickness Control and Structural Characterization of Two-Dimensional Tin Selenide
DOI: 10.12677/ms.2024.145081, PDF,   
作者: 周 亮：厦门大学物理科学与技术学院，福建 厦门
关键词: 硒化锡；气相输运；拉曼光谱；Tin Selenide； Vapor Transport； Raman Spectra
摘要: 硒化锡是近年来备受关注的IV-VI族化合物半导体材料之一，在热电和光电等领域具有广阔的应用前景。高质量二维硒化锡的可控制备和特性研究是发展其实际应用的必要条件。本文采用气相输运方法制备硒化锡二维晶片，通过优化生长温度实现了对其尺寸和厚度的调控，并基于统计分析讨论其形成机理。进一步对所制备的不同厚度的硒化锡晶片进行拉曼表征，观察到随着厚度的减小其面内振动模式发生红移，这与原子间相互作用以及应力变化等因素有关。研究结果可为薄层硒化锡的生长以及理解其厚度依赖的结构特性提供参考。
Abstract: Tin selenide is one of the IV-VI group compound semiconductors that has attracted considerable attention in recent years and exhibited promising applications in thermoelectrics and optoelectronics. The controllable growth and characterization of high-quality two-dimensional tin selenide are essential for the development of its practical applications. In this work, two-dimensional tin selenide flakes have been prepared by using the vapor transport method. It is found that the size and thickness of the flakes can be controlled by the optimization of growth temperature. The formation mechanism has been discussed based on statistical analysis. Furthermore, Raman spectra obtained on tin selenide thin flakes with various thicknesses reveal a red shift for the in-plane vibration modes as the thickness decreases, which is related to the changes in atomic interaction and strain effects. The results provide a valuable reference for the growth of thin-layer tin selenide and the understanding of its thickness-dependent properties.
文章引用：周亮. 二维硒化锡的厚度调控和结构研究[J]. 材料科学, 2024, 14(5): 738-743. https://doi.org/10.12677/ms.2024.145081

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