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MS  >> Vol. 6 No. 6 (November 2016)

    钯–硅(Pd-Si)薄膜表面偏析研究
    Surface Segregation in Pd-Si Thin Films

  • 全文下载: PDF(823KB) HTML   XML   PP.334-345   DOI: 10.12677/MS.2016.66044  
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作者:  

陈 煜,黄立豪,杨士栋,邹永恒,姜国利,王江涌：汕头大学物理系，广东 汕头

关键词:
表面偏析；修正的Darken模型；尺寸效应；Pd-Si薄膜；Pd-Si二元合金；Surface Segregation； Modified Darken Model； Size Effect； Pd-Si Thin Film； Pd-Si Alloy

摘要:

本文应用修正的Darken模型，结合考虑薄膜尺寸效应的约束条件，对PdSi、Pd2Si、Pd3Si、Pd9Si2、Pd5Si合金薄膜的平衡态及动态表面偏析进行了模拟计算，其中，偏析参数，即偏析能ΔG和相互作用系数Ω，分别由Miedema模型和相图计算方法获得。结果表明：尺寸效应对Pd-Si合金薄膜体系偏析的影响不是很明显。

In this paper, equilibrium and kinetic surface segregation in Pd-Si alloy thin films are simulated by applying the modified Darken model under a constrained condition for taking into account the size effect. The corresponding segregation parameters, i.e. segregation energy and interaction parame-ter, are obtained by the Miedema model and the CALPHAD (Calculation of Phase Diagrams) method. The simulated results indicate that the size effect in the Pd-Si alloy thin film is not pronounced.

文章引用:
陈煜, 黄立豪, 杨士栋, 邹永恒, 姜国利, 王江涌. 钯–硅(Pd-Si)薄膜表面偏析研究[J]. 材料科学, 2016, 6(6): 334-345. http://dx.doi.org/10.12677/MS.2016.66044

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