AMC  >> Vol. 5 No. 1 (January 2017)

    化学气相沉积法制备MoS2的研究进展
    Research Progress on MoS2 Prepared by Chemical Vapor Deposition

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作者:  

王 洁,陈秋月,张永平:西南大学材料与能源学部,重庆

关键词:
过渡族金属硫化物MoS2化学气相沉积纳米材料Transition-Metal Dichalcogenides MoS2 Chemical Vapor Deposition Nanostructured Materials

摘要:

二维纳米结构的过渡族金属硫化物MoS2有着不同寻常的物理化学性质,在光电性能、可见光催化、润滑性和摩擦性方面有着广泛的应用价值。制备纳米结构MoS2有物理的和化学的方法,其中化学气相沉积是一种简便实用的生长大面积高质量MoS2的方法。本文详细讨论了化学气相沉积过程中反应时间、载气体流速、先驱体化学计量比和基体放置位置等因素对MoS2结构的影响。不同结构的MoS2其性质有决定性的影响,使得这种层状二维材料获得广泛的应用。

Nanostructured MoS2, a two dimensional transition-metal dichalcogenides, has found extensive application in phtotoelectricity, visible light catalysts, lubricity and friction performance because of its unusual physical and chemical properties. Chemical vapor deposition is one of the most practical methods to prepare the large area and high quality MoS2 among all the physical or chemical methods. This paper reviews the effect of the reaction time, carrier gas flow rate, stoichiometric ratio of precursors and substrate position on the morphology and structure of MoS2. Two- dimensional layered MoS2 may find optimal utilizations since its property varies significantly with different structures.

文章引用:
王洁, 陈秋月, 张永平. 化学气相沉积法制备MoS2的研究进展[J]. 材料化学前沿, 2017, 5(1): 1-10. http://dx.doi.org/10.12677/AMC.2017.51001

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