二硒化锡半导体材料合成及其光学和光电性能增强机理研究
Study on the Synthesis of SnSe2 Semiconductor Material and the Enhancement Mechanisms of Optical and Photoelectric Performances
摘要: 调控半导体材料结晶性和微结构是增强光吸收和光电转换性能的有效策略。实验发现，当前驱体中添加0.8 g PVP，水热条件为12 h和180℃时合成的SnSe2在200~2500 nm宽光谱范围内均具有最佳的光吸收性能，并在模拟光照和外加1.23 V vs. RHE条件下其光电流密度最大约为0.04 mA/cm2。优化后的SnSe2材料光吸收和光电转换性能的增强机制主要归于结晶度、纯净度和微结构的改善促进光吸收特性和提升光生载流子分离与迁移效率，从而增强其光电转换效率。本实验为通过表面活性剂来调控新型半导体材料的光吸收和光电转换性能提供了研究思路，同时也为设计和开发高效催化剂奠定了实验基础。
Abstract: Regulating crystallinity and microstructure of semiconductor materials are effective strategies to enhance the light absorption and photoelectric conversion performances. It was found that SnSe2, which was synthesized by adding 0.8 g PVP to the precursor under hydrothermal conditions of 12 h and 180˚C, had the best light absorption performance in the wide spectral range of 200~2500 nm. Meanwhile, the photocurrent density is approximately 0.04 mA/cm2 under simulated illumination and 1.23 V vs. RHE. The enhancement mechanisms of light absorption and photoelectric conversion performances of the optimized SnSe2 material are mainly attributed to the improvement of crystallinity, purity and microstructure to promote light absorption characteristic and improve photogenerated carrier separation and migration efficiencies, so as to enhance the photoelectric conversion efficiency of SnSe2. This experiment provides a research idea for regulating light absorption and photoelectric conversion performances of new semiconductor materials by surfactants, and also lays an experimental foundation for designing and developing efficient catalysts.
文章引用：穆江龙, 徐晟歌, 夏玉麟. 二硒化锡半导体材料合成及其光学和光电性能增强机理研究[J]. 物理化学进展, 2024, 13(4): 573-583. https://doi.org/10.12677/japc.2024.134061

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