基于Ge3Sb2Te6的热模光刻图形化研究
Research on Patterning Based on Ge3Sb2Te6 for Heat-Mode Lithography
DOI: 10.12677/mos.2025.145375, PDF,   
作者: 池家豪：上海理工大学光电信息与计算机工程学院，上海
关键词: 热模光刻；Ge3Sb2Te6；显影；ICP刻蚀；热场；Heat-Mode Lithography； Ge3Sb2Te6； Development； ICP Etching； Thermal Field
摘要: 激光热模光刻是基于激光直写光刻，采用特殊的光刻材料发展起来的一种新型光刻技术。该技术可以实现超分辨微纳结构制备，具有工艺简单、成本低等优势。Ge3Sb2Te6因其稳定的相态保持与优异的相变特性，在热敏光刻胶领域极具发展潜力。文章深入探讨了Ge3Sb2Te6的光刻性能，研究内容涵盖了Ge3Sb2Te6的薄膜特性、湿法显影特性。使用COMSOL Multiphysics软件对Ge3Sb2Te6的曝光热场进行了数值模拟，分析了曝光功率对热场特性的影响。并设计了系列实验，验证了仿真结果，首次优化了对Ge3Sb2Te6正性显影特性的图形化工艺优化，最终实现光刻胶图形向硅衬底的图形转移。
Abstract: Laser heat-mode lithography is a novel lithographic technique developed from laser direct writing, utilizing specialized photoresist materials. This technology enables the fabrication of ultra-high-resolution micro-nano structures and offers advantages such as a straightforward process and low costs. Ge3Sb2Te6, owing to its stable phase retention and exceptional phase-change characteristics, holds significant developmental potential in the field of thermosensitive photoresists. This study provides an in-depth exploration of the lithographic performance of Ge3Sb2Te6, covering research on its thin-film properties and wet development characteristics. Numerical simulations of the exposure thermal field for Ge3Sb2Te6 were conducted using COMSOL Multiphysics software, allowing for an analysis of how exposure power affects thermal field characteristics. A series of experiments were designed to validate the simulation results, resulting in the first optimization of the graphical process for positive development characteristics of Ge3Sb2Te6. Ultimately, this work achieved the successful transfer of photoresist patterns onto silicon substrates.
文章引用：池家豪. 基于Ge3Sb2Te6的热模光刻图形化研究[J]. 建模与仿真, 2025, 14(5): 83-91. https://doi.org/10.12677/mos.2025.145375

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