针孔缺陷下的全硅介质层同轴硅通孔热应力仿真分析

Thermal Stress Simulation Analysis of Coaxial Through-Silicon Via in All-Silicon Dielectric Layer under Pinhole Defect

摘要: 文章以同轴硅通孔(Coaxial Through-Silicon Via, C-TSV)的基本三维模型为基础，研究其发生针孔缺陷时的热应力变化。采用有限元分析法，借助热仿真软件COMSOL搭建对应模型，对处于20℃~120℃工作环境下的模型热应力变化进行仿真。将不同温度载荷下针孔缺陷硅通孔应力变化情况与无缺陷同轴硅通孔同等温度条件下的热应力进行对比。实验表明，针孔缺陷将放大硅通孔在高温载荷下的能量释放与应力形变，最终导致C-TSV发生裂纹现象与材料剥离。本研究对缺陷硅通孔进行建模，并且提出了有效抑制该缺陷的措施，填充了对于缺陷同轴硅通孔在应用领域检测与应对方面的空白。

Abstract: Based on the basic three-dimensional model of coaxial through-silicon via (C-TSV), this paper studies the thermal stress changes when pinhole defects occur. In this study, the finite element analysis method was used to build the corresponding model with the help of the thermal simulation software COMSOL, and the thermal stress change of the model under the working environment of 20˚C ~120˚C was simulated. The stress changes of the pinhole-defective through-silicon vias under different temperature loads are compared with the thermal stress of the defect-free coaxial through-silicon vias under the same temperature conditions. Experiments show that the pinhole defect will amplify the energy release and stress deformation of the through silicon vias under a high-temperature load, which will eventually lead to the crack phenomenon and material peeling of C-TSV. In this study, the defect through silicon via is modeled, and effective measures to suppress the defect are proposed, which fills the gap in the detection and response of the defect coaxial through silicon via in the application field.