基于超短门控脉冲的GHz InGaAs/InP单光子探测
GHz InGaAs/InP Single-Photon Detection with Ultrashort Gates
DOI: 10.12677/japc.2025.142034, PDF,   
作者: 王泽云, 张怡萍, 梁 焰：上海理工大学光电信息与计算机工程学院，上海
关键词: 单光子探测器；雪崩光电二极管；高速探测；Single-Photon Detector； Avalanche Photodiode； High-Speed Detection
摘要: 本文基于InGaAs/InP雪崩光电二极管设计了1-GHz门控盖革模式单光子探测器。通过电容平衡技术与低通滤波相结合的方案实现了雪崩信号的有效提取，并使探测器的重复频率可在较大范围内连续调节。此外，超短门控脉冲被用于控制雪崩光电二极管的偏置电压，进一步提高了探测器性能。最终实现的探测效率为11.0%，暗计数率为7.0 × 10−7/门，后脉冲概率为4.7%。该GHz单光子探测器的时间抖动测量值约为94 ps，使其非常适用于高速量子密钥分发和激光测距系统。
Abstract: A single-photon detector was demonstrated with InGaAs/InP avalanche photodiode operated in 1-GHz gated Geiger mode. The capacitance-balancing technique was combined with low-pass filtering to achieve the valid extraction of the avalanche signal. With this method, the repetition frequency of this detector could be continuously tuned on a large scale. Moreover, ultrashort gates were employed to control the bias voltage of the avalanche photodiode, further improving the performance of the detector. Detection efficiency of 11.0% was finally attained with dark count rate of 7.0 × 10−7/gate and afterpulse probability of 4.7%. Besides that, the timing jitter of this GHz single-photon detector was measured to be ~94 ps, making it quite suitable for high-speed quantum key distribution and laser ranging systems.
文章引用：王泽云, 张怡萍, 梁焰. 基于超短门控脉冲的GHz InGaAs/InP单光子探测[J]. 物理化学进展, 2025, 14(2): 363-369. https://doi.org/10.12677/japc.2025.142034

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