低能质子辐照下GaInP/GaAs/Ge三结太阳电池串并联电阻特性研究

Study on Series and Shunt Resistance Characteristics of GaInP/GaAs/Ge Tri-Junction Solar Cells under Low-Energy Proton Irradiation

摘要: 本探究GaInP/GaAs/Ge三结太阳电池在质子辐照下的电阻特性变化规律。相同能量质子辐照下，随质子注量的增加电池串联电阻上升，并联电阻下降；低能质子通过损伤发射区、基区阻碍载流子传输，同时在结区形成深能级缺陷诱发漏电流，共同降低电池性能。注量一致的条件下，170 keV (穿透顶电池损伤中电池核心区)与40 keV (损伤顶电池发射区)质子造成的串联电阻增幅最显著，130 keV (损伤中电池发射区)与100 keV (缺陷集中于隧道结)质子的影响较弱；并联电阻方面，170 keV质子因破坏中电池核心结区导致降幅最大，130 keV质子影响次之，40 keV与100 keV质子的作用相对轻微。本研究明确了质子能量、注量与电池电阻损伤的关联机制，为空间太阳电池抗辐照设计与寿命评估提供关键支撑。

Abstract: This study investigates the variation law of resistance characteristics of GaInP/GaAs/Ge tri-junction solar cells under proton irradiation. Under proton irradiation of the same energy, the series resistance of the cells increases and the shunt resistance decreases with the increase of proton fluence. Low-energy protons impede carrier transport by damaging the emitter and base regions, and simultaneously induce leakage current by forming deep-level defects in the junction regions, which together degrade the cell performance. Under the condition of consistent fluence, 170 keV protons (which penetrate the top cell and damage the core region of the middle cell) and 40 keV protons (which damage the emitter region of the top cell) cause the most significant increase in series resistance, while the effects of 130 keV protons (which damage the emitter region of the middle cell) and 100 keV protons (whose defects concentrate in the tunnel junctions) are relatively weak. In terms of shunt resistance, 170 keV protons lead to the largest decrease due to the destruction of the core junction region of the middle cell, followed by 130 keV protons, and the effects of 40 keV and 100 keV protons are relatively slight. This study clarifies the correlation mechanism between proton energy, proton fluence and cell resistance damage, providing critical support for the radiation-hardened design and lifetime evaluation of space solar cells.